Design and implement of an S-band 280 W GaN internally matched transistor

Engineering

• Design Optimization 50%
• Drain Voltage 100%
• Duty Ratio 50%
• Internals 50%
• Matching Network 50%
• Output Power 100%
• Power Amplifier 50%
• Power Gain 50%
• S-Band 100%
• Scattering Parameters 50%
• Simulation Result 50%
• Simulation Software 50%
• Test Data 50%
• Test Result 50%