DC and RF accelerated life testing of GaN microwave power device

Yang Yang; Bo Xu; Dongming Jia; Hao Jiang; Shi Yao; Tangsheng Chen; Feng Qian

DC and RF accelerated life testing of GaN microwave power device

Yang Yang^*, Bo Xu, Dongming Jia, Hao Jiang, Shi Yao, Tangsheng Chen, Feng Qian

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科研成果: 期刊稿件 › 文章 › 同行评审

摘要

1.25 mm gate-width GaN HEMT and 12 mm gate-width GaN microwave power amplifier fabricated by Nanjing Electronic Devices Institute were chosen for the test. The DC working reliability of the 1.25 mm gate-width GaN HEMT was evaluated by using three-temperature accelerated life testing, and the results showed that the failure probability was 1. 86×10^-9/h at the channel temperature of 125℃; The RF working reliability of the 12 mm gate-width GaN HEMT was evaluated by using RF accelerated life testing, and the results showed that the failure probability was less than 1.02×10^-7/h at the channel temperature of 125℃.

源语言	英语
页（从-至）	217-220 and 252
期刊	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
卷	35
期	3
出版状态	已出版 - 25 6月 2015
已对外发布	是

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title = "DC and RF accelerated life testing of GaN microwave power device",

abstract = "1.25 mm gate-width GaN HEMT and 12 mm gate-width GaN microwave power amplifier fabricated by Nanjing Electronic Devices Institute were chosen for the test. The DC working reliability of the 1.25 mm gate-width GaN HEMT was evaluated by using three-temperature accelerated life testing, and the results showed that the failure probability was 1. 86×10-9/h at the channel temperature of 125℃; The RF working reliability of the 12 mm gate-width GaN HEMT was evaluated by using RF accelerated life testing, and the results showed that the failure probability was less than 1.02×10-7/h at the channel temperature of 125℃.",

keywords = "Accelerated life test, GaN, High electron mobility transistor(HEMT), Microwave power device",

author = "Yang Yang and Bo Xu and Dongming Jia and Hao Jiang and Shi Yao and Tangsheng Chen and Feng Qian",

year = "2015",

month = jun,

day = "25",

language = "English",

volume = "35",

pages = "217--220 and 252",

journal = "Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics",

issn = "1000-3819",

publisher = "Research Progress of Solid State Electronics",

number = "3",

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TY - JOUR

T1 - DC and RF accelerated life testing of GaN microwave power device

AU - Yang, Yang

AU - Xu, Bo

AU - Jia, Dongming

AU - Jiang, Hao

AU - Yao, Shi

AU - Chen, Tangsheng

AU - Qian, Feng

PY - 2015/6/25

Y1 - 2015/6/25

N2 - 1.25 mm gate-width GaN HEMT and 12 mm gate-width GaN microwave power amplifier fabricated by Nanjing Electronic Devices Institute were chosen for the test. The DC working reliability of the 1.25 mm gate-width GaN HEMT was evaluated by using three-temperature accelerated life testing, and the results showed that the failure probability was 1. 86×10-9/h at the channel temperature of 125℃; The RF working reliability of the 12 mm gate-width GaN HEMT was evaluated by using RF accelerated life testing, and the results showed that the failure probability was less than 1.02×10-7/h at the channel temperature of 125℃.

AB - 1.25 mm gate-width GaN HEMT and 12 mm gate-width GaN microwave power amplifier fabricated by Nanjing Electronic Devices Institute were chosen for the test. The DC working reliability of the 1.25 mm gate-width GaN HEMT was evaluated by using three-temperature accelerated life testing, and the results showed that the failure probability was 1. 86×10-9/h at the channel temperature of 125℃; The RF working reliability of the 12 mm gate-width GaN HEMT was evaluated by using RF accelerated life testing, and the results showed that the failure probability was less than 1.02×10-7/h at the channel temperature of 125℃.

KW - Accelerated life test

KW - GaN

KW - High electron mobility transistor(HEMT)

KW - Microwave power device

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AN - SCOPUS:84937402422

SN - 1000-3819

VL - 35

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JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 3

ER -

DC and RF accelerated life testing of GaN microwave power device

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