DC and RF accelerated life testing of GaN microwave power device

Yang Yang*, Bo Xu, Dongming Jia, Hao Jiang, Shi Yao, Tangsheng Chen, Feng Qian

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

摘要

1.25 mm gate-width GaN HEMT and 12 mm gate-width GaN microwave power amplifier fabricated by Nanjing Electronic Devices Institute were chosen for the test. The DC working reliability of the 1.25 mm gate-width GaN HEMT was evaluated by using three-temperature accelerated life testing, and the results showed that the failure probability was 1. 86×10-9/h at the channel temperature of 125℃; The RF working reliability of the 12 mm gate-width GaN HEMT was evaluated by using RF accelerated life testing, and the results showed that the failure probability was less than 1.02×10-7/h at the channel temperature of 125℃.

源语言英语
页(从-至)217-220 and 252
期刊Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
35
3
出版状态已出版 - 25 6月 2015
已对外发布

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