摘要
1.25 mm gate-width GaN HEMT and 12 mm gate-width GaN microwave power amplifier fabricated by Nanjing Electronic Devices Institute were chosen for the test. The DC working reliability of the 1.25 mm gate-width GaN HEMT was evaluated by using three-temperature accelerated life testing, and the results showed that the failure probability was 1. 86×10-9/h at the channel temperature of 125℃; The RF working reliability of the 12 mm gate-width GaN HEMT was evaluated by using RF accelerated life testing, and the results showed that the failure probability was less than 1.02×10-7/h at the channel temperature of 125℃.
源语言 | 英语 |
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页(从-至) | 217-220 and 252 |
期刊 | Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics |
卷 | 35 |
期 | 3 |
出版状态 | 已出版 - 25 6月 2015 |
已对外发布 | 是 |