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Controlling Polarity of MoTe
2
Transistors for Monolithic Complementary Logic via Schottky Contact Engineering
Xia Liu
, Arnob Islam, Jing Guo, Philip X.L. Feng
*
*
此作品的通讯作者
Case School of Engineering
University of Florida
科研成果
:
期刊稿件
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文章
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同行评审
35
引用 (Scopus)
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探究 'Controlling Polarity of MoTe
2
Transistors for Monolithic Complementary Logic via Schottky Contact Engineering' 的科研主题。它们共同构成独一无二的指纹。
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Engineering
Engineering
100%
Field-Effect Transistor
100%
Schottky Barrier
100%
Nitride
66%
Two Dimensional
33%
Metal Contact
33%
Thin Layer
16%
Dopants
16%
Free Method
16%
Energy Gap
16%
Nanoelectronics
16%
Integrated Circuit
16%
Energy Barrier
16%
Crystalline Phase
16%
Current Ratio
16%
Material Science
Transistor
100%
Field Effect Transistor
100%
Schottky Barrier
100%
Boron Nitride
66%
Annealing
50%
Crystalline Material
16%
Silicon
16%
Nanoelectronics
16%
Molybdenum
16%
Electronic Circuit
16%
Doping (Additives)
16%
Inverter
16%