Contact printing of horizontally aligned Zn₂GeO₄ and In₂Ge₂O₇ nanowire arrays for multi-channel field-effect transistors and their photoresponse performances

Engineering

• Multichannel 100%
• Nanowires 100%
• Field-Effect Transistor 100%
• Channel Transistor 33%
• Repeatability 16%
• Building Block 16%
• Printing Process 16%
• Photodetector 16%
• Single Channel 16%
• Quantum Efficiency 16%
• Ultraviolet Light 16%
• Field Effect Transistor 16%
• Semiconductor Type 16%
• Voltage Stability 16%

Material Science

• Nanowire 100%
• Field Effect Transistor 100%
• Transistor 33%
• Oxide Compound 16%
• Photosensor 16%