@inproceedings{a84deb4f393442af927af8fe3e25b45b,
title = "Circular photogalvanic effect in CdSe nanowires at room temperature",
abstract = "The anisotropy of Dresselhaus spin-orbit coupling (SOC) in cadmium selenide (CdSe) nanobelt and nanowire was studied by circular photogalvanic effect and it was demonstrated that the Dresselhuas SOC parameter is zero along [0001] crystallographic direction. The zero Dresselhaus SOC suppresses the spin relaxation and increases the spin diffusion length, which is beneficial to spin manipulation. To achieve a device structure with Rashba SOC presence and Dresselhaus SOC absence to manipulate spin degree of freedom, ionic liquid gate was applied on a nanowire grown along [0001] crystallographic direction, and Rashba SOC was induced as expected.",
keywords = "CdSe nanobelt/nanowire, Dresselhuas SOC, Rashba spin orbit coupling (SOC), circular photogalvanic effect, ionic liquid",
author = "Ning Tang and Shan Zhang and Junxi Duan and Xin He and Lun Dai and Weikun Ge and Bo Shen",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 Compound Semiconductor Week, CSW 2016 ; Conference date: 26-06-2016 Through 30-06-2016",
year = "2016",
month = aug,
day = "1",
doi = "10.1109/ICIPRM.2016.7528718",
language = "English",
series = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
address = "United States",
}