Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy

Yong Zhang, Ye Liang Wang*, Yan De Que, Hong Jun Gao

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

2 引用 (Scopus)

摘要

An efficient method based on atomic force microscopy (AFM) has been developed to characterize silicon intercalated graphene grown on single crystalline Ir(111) thin films. By combining analyses of the phase image, force curves, and friction-force mapping, acquired by AFM, the locations and coverages of graphene and silicon oxide can be well distinguished. We can also demonstrate that silicon atoms have been successfully intercalated between graphene and the substrate. Our method gives an efficient and simple way to characterize graphene samples with interacted atoms and is very helpful for future applications of graphene-based devices in the modern microelectronic industry, where AFM is already widely used.

源语言英语
文章编号078104
期刊Chinese Physics B
24
7
DOI
出版状态已出版 - 1 7月 2015
已对外发布

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