C-Band High Efficiency GaN HEMT Power Amplifier with Harmonic Tuning

Jiaqing Sun, Weibin Zheng, Feng Qian

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

In this paper, the design and measurements of a 5-6GHz high-efficiency MMIC high power amplifier implemented in a \mathbf{0.25}\mu\mathbf{m} GaN HEMT process was described. The MMIC has been designed using 2-stage topology. At 5-6GHz, the MMIC showed a power-added efficiency (PAE) of 44%-52% with an associated gain over 20dBm and an output power of 35dBm. The MMIC achieved above 50% PAE at 5.3-5.6GHz. The key to this design is determining and matching the optimum source and load impedance for PAE at the first three harmonics in output stage in order to improve the PAE.

源语言英语
主期刊名2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781538624166
DOI
出版状态已出版 - 5 12月 2018
已对外发布
活动10th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Chengdu, 中国
期限: 6 5月 20189 5月 2018

出版系列

姓名2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings

会议

会议10th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018
国家/地区中国
Chengdu
时期6/05/189/05/18

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