Buffer layer-induced positive magnetoresistance in manganite-based heterojunctions

W. W. Gao; W. M. Lü; A. D. Wei; J. Wang; J. Shen; B. G. Shen; J. R. Sun

doi:10.1063/1.3673858

Buffer layer-induced positive magnetoresistance in manganite-based heterojunctions

W. W. Gao, W. M. Lü, A. D. Wei, J. Wang, J. Shen, B. G. Shen, J. R. Sun^*

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

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Effects of the LaMnO ₃ (LMO) buffer layer on the magnetoresistive behaviors of La _0.67A _0.33MnO ₃/LaMnO ₃/SrTiO ₃:0.05 wt Nb (LAMO/LMO/STON, A Ca, Sr) have been experimentally studied. In addition to an enhanced response to a magnetic field, the current-voltage relations show a downward shift in magnetic field, indicating an increase of the junction resistance. It is completely different from that observed in the junctions without buffer layer. The positive magnetoresistance (MR) is strongly dependent on the thickness of the LMO layer, increasing first then decreasing with the increase of layer thickness. Furthermore, it is significantly stronger in LCMO/LMO/STON than in LSMO/LMO/STON. The maximal MR at 50 K is ∼90 for LCMO/LMO/STON and ∼52 for LSMO/LMO/STON, occurring at the LMO thickness of 4 nm under the field of 5 T. The MR persists up to 350 K, and it is ∼30 and ∼24 for the LCMO and LSMO junctions, respectively. An analysis of the current-voltage characteristics indicates an increase in interfacial barrier in magnetic field, which is the origin for the positive MR.

源语言	英语
文章编号	07D711
期刊	Journal of Applied Physics
卷	111
期	7
DOI	https://doi.org/10.1063/1.3673858
出版状态	已出版 - 1 4月 2012
已对外发布	是

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title = "Buffer layer-induced positive magnetoresistance in manganite-based heterojunctions",

abstract = "Effects of the LaMnO 3 (LMO) buffer layer on the magnetoresistive behaviors of La 0.67A 0.33MnO 3/LaMnO 3/SrTiO 3:0.05 wt Nb (LAMO/LMO/STON, A Ca, Sr) have been experimentally studied. In addition to an enhanced response to a magnetic field, the current-voltage relations show a downward shift in magnetic field, indicating an increase of the junction resistance. It is completely different from that observed in the junctions without buffer layer. The positive magnetoresistance (MR) is strongly dependent on the thickness of the LMO layer, increasing first then decreasing with the increase of layer thickness. Furthermore, it is significantly stronger in LCMO/LMO/STON than in LSMO/LMO/STON. The maximal MR at 50 K is ∼90 for LCMO/LMO/STON and ∼52 for LSMO/LMO/STON, occurring at the LMO thickness of 4 nm under the field of 5 T. The MR persists up to 350 K, and it is ∼30 and ∼24 for the LCMO and LSMO junctions, respectively. An analysis of the current-voltage characteristics indicates an increase in interfacial barrier in magnetic field, which is the origin for the positive MR.",

author = "Gao, {W. W.} and L{\"u}, {W. M.} and Wei, {A. D.} and J. Wang and J. Shen and Shen, {B. G.} and Sun, {J. R.}",

year = "2012",

month = apr,

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T1 - Buffer layer-induced positive magnetoresistance in manganite-based heterojunctions

AU - Gao, W. W.

AU - Lü, W. M.

AU - Wei, A. D.

AU - Wang, J.

AU - Shen, J.

AU - Shen, B. G.

AU - Sun, J. R.

PY - 2012/4/1

Y1 - 2012/4/1

N2 - Effects of the LaMnO 3 (LMO) buffer layer on the magnetoresistive behaviors of La 0.67A 0.33MnO 3/LaMnO 3/SrTiO 3:0.05 wt Nb (LAMO/LMO/STON, A Ca, Sr) have been experimentally studied. In addition to an enhanced response to a magnetic field, the current-voltage relations show a downward shift in magnetic field, indicating an increase of the junction resistance. It is completely different from that observed in the junctions without buffer layer. The positive magnetoresistance (MR) is strongly dependent on the thickness of the LMO layer, increasing first then decreasing with the increase of layer thickness. Furthermore, it is significantly stronger in LCMO/LMO/STON than in LSMO/LMO/STON. The maximal MR at 50 K is ∼90 for LCMO/LMO/STON and ∼52 for LSMO/LMO/STON, occurring at the LMO thickness of 4 nm under the field of 5 T. The MR persists up to 350 K, and it is ∼30 and ∼24 for the LCMO and LSMO junctions, respectively. An analysis of the current-voltage characteristics indicates an increase in interfacial barrier in magnetic field, which is the origin for the positive MR.

AB - Effects of the LaMnO 3 (LMO) buffer layer on the magnetoresistive behaviors of La 0.67A 0.33MnO 3/LaMnO 3/SrTiO 3:0.05 wt Nb (LAMO/LMO/STON, A Ca, Sr) have been experimentally studied. In addition to an enhanced response to a magnetic field, the current-voltage relations show a downward shift in magnetic field, indicating an increase of the junction resistance. It is completely different from that observed in the junctions without buffer layer. The positive magnetoresistance (MR) is strongly dependent on the thickness of the LMO layer, increasing first then decreasing with the increase of layer thickness. Furthermore, it is significantly stronger in LCMO/LMO/STON than in LSMO/LMO/STON. The maximal MR at 50 K is ∼90 for LCMO/LMO/STON and ∼52 for LSMO/LMO/STON, occurring at the LMO thickness of 4 nm under the field of 5 T. The MR persists up to 350 K, and it is ∼30 and ∼24 for the LCMO and LSMO junctions, respectively. An analysis of the current-voltage characteristics indicates an increase in interfacial barrier in magnetic field, which is the origin for the positive MR.

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Buffer layer-induced positive magnetoresistance in manganite-based heterojunctions

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