Atomic Imaging of Electrically Switchable Striped Domains in β′-In₂Se₃

Engineering

• Scanning Tunneling Microscopy 100%
• Low-Temperature 50%
• Room Temperature 50%
• Applied Voltage 50%
• Nanoscale 50%
• Reconfiguration 50%
• Domain Structure 50%
• Field-Effect Transistor 50%
• Dynamic Switching 50%
• Flexoelectric Effect 50%

Material Science

• Ferroelectricity 100%
• Scanning Tunneling Microscopy 100%
• Ferroelectric Material 100%
• Indium 50%
• Field Effect Transistor 50%