Ablated transformation and dielectric of SiO2/SiO2 nanocomposites dipped with silicon resin

Mao Sheng Cao; Hai Bo Jin; Jin Gang Li; Liang Zhang; Qiang Xu; Xiang Li; Lan Tian Xiong

doi:10.4028/0-87849-410-3.1239

Ablated transformation and dielectric of SiO₂/SiO₂ nanocomposites dipped with silicon resin

Mao Sheng Cao^*, Hai Bo Jin, Jin Gang Li, Liang Zhang, Qiang Xu, Xiang Li, Lan Tian Xiong

^*此作品的通讯作者

材料学院

Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

16 引用（Scopus）

摘要

SiO₂/ SiO₂ nanocomposites dipped with silicon resin was ablated and the physical state and phase transformation were characterized. Trace impurity in raw material and compound obtained by chemical reaction were analyzed. Moreover, the high-temperature dielectric properties were investigated. On the basis of above, it is found that the impurity carbon and silicon carbide are the key factors influencing dielectric properties.

源语言	英语
页（从-至）	1239-1241
页数	3
期刊	Key Engineering Materials
卷	336-338 II
DOI	https://doi.org/10.4028/0-87849-410-3.1239
出版状态	已出版 - 2007

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title = "Ablated transformation and dielectric of SiO2/SiO2 nanocomposites dipped with silicon resin",

abstract = "SiO2/ SiO2 nanocomposites dipped with silicon resin was ablated and the physical state and phase transformation were characterized. Trace impurity in raw material and compound obtained by chemical reaction were analyzed. Moreover, the high-temperature dielectric properties were investigated. On the basis of above, it is found that the impurity carbon and silicon carbide are the key factors influencing dielectric properties.",

keywords = "Ablation, High-temperature dielectric properties, Silicon dioxide, Transformation",

author = "Cao, {Mao Sheng} and Jin, {Hai Bo} and Li, {Jin Gang} and Liang Zhang and Qiang Xu and Xiang Li and Xiong, {Lan Tian}",

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doi = "10.4028/0-87849-410-3.1239",

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T1 - Ablated transformation and dielectric of SiO2/SiO2 nanocomposites dipped with silicon resin

AU - Cao, Mao Sheng

AU - Jin, Hai Bo

AU - Li, Jin Gang

AU - Zhang, Liang

AU - Xu, Qiang

AU - Li, Xiang

AU - Xiong, Lan Tian

PY - 2007

Y1 - 2007

N2 - SiO2/ SiO2 nanocomposites dipped with silicon resin was ablated and the physical state and phase transformation were characterized. Trace impurity in raw material and compound obtained by chemical reaction were analyzed. Moreover, the high-temperature dielectric properties were investigated. On the basis of above, it is found that the impurity carbon and silicon carbide are the key factors influencing dielectric properties.

AB - SiO2/ SiO2 nanocomposites dipped with silicon resin was ablated and the physical state and phase transformation were characterized. Trace impurity in raw material and compound obtained by chemical reaction were analyzed. Moreover, the high-temperature dielectric properties were investigated. On the basis of above, it is found that the impurity carbon and silicon carbide are the key factors influencing dielectric properties.

KW - Ablation

KW - High-temperature dielectric properties

KW - Silicon dioxide

KW - Transformation

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U2 - 10.4028/0-87849-410-3.1239

DO - 10.4028/0-87849-410-3.1239

M3 - Article

AN - SCOPUS:33947230173

SN - 1013-9826

VL - 336-338 II

SP - 1239

EP - 1241

JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Ablated transformation and dielectric of SiO2/SiO2 nanocomposites dipped with silicon resin

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Ablated transformation and dielectric of SiO₂/SiO₂ nanocomposites dipped with silicon resin