A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI

Fang Han; Xuzhi Liu; Chao Wang; Xiao Li; Quanwen Qi; Xiaoran Li; Zicheng Liu

doi:10.3390/electronics11193255

A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI

Fang Han, Xuzhi Liu, Chao Wang, Xiao Li, Quanwen Qi, Xiaoran Li^*, Zicheng Liu^*

^*此作品的通讯作者

集成电路与电子学院

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

This paper presents a multi-band low-noise amplifier (LNA) in the 45-nm CMOS silicon-on-insulator (SOI) process. The LNA consists of three stages, with the differential cascode amplifier as the core structure. The first stage is mainly responsible for input matching to ensure favourable noise characteristics and bandwidth, while the subsequent stages increase the gain. Moreover, the LNA utilizes baluns for input/output and interstage impedance matching. Switch capacitances are added to switch the three operating bands of the LNA, which cover 17–38 GHz overall. Measurement results show that the proposed LNA achieves a gain (S21) of 23.0 dB and a noise figure (NF) of 4.0 dB.

源语言	英语
文章编号	3255
期刊	Electronics (Switzerland)
卷	11
期	19
DOI	https://doi.org/10.3390/electronics11193255
出版状态	已出版 - 10月 2022

访问文件

10.3390/electronics11193255

其它文件与链接

链接到 Scopus 的出版物

引用此

Han, F., Liu, X., Wang, C., Li, X., Qi, Q., Li, X., & Liu, Z. (2022). A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI. Electronics (Switzerland), 11(19), 文章 3255. https://doi.org/10.3390/electronics11193255

@article{4571d426cba84e2e8e01c8de832e2903,

title = "A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI",

abstract = "This paper presents a multi-band low-noise amplifier (LNA) in the 45-nm CMOS silicon-on-insulator (SOI) process. The LNA consists of three stages, with the differential cascode amplifier as the core structure. The first stage is mainly responsible for input matching to ensure favourable noise characteristics and bandwidth, while the subsequent stages increase the gain. Moreover, the LNA utilizes baluns for input/output and interstage impedance matching. Switch capacitances are added to switch the three operating bands of the LNA, which cover 17–38 GHz overall. Measurement results show that the proposed LNA achieves a gain (S21) of 23.0 dB and a noise figure (NF) of 4.0 dB.",

keywords = "balun, cascode, low-noise amplifier (LNA), multi-band, switch capacitance",

author = "Fang Han and Xuzhi Liu and Chao Wang and Xiao Li and Quanwen Qi and Xiaoran Li and Zicheng Liu",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors.",

year = "2022",

month = oct,

doi = "10.3390/electronics11193255",

language = "English",

volume = "11",

journal = "Electronics (Switzerland)",

issn = "2079-9292",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "19",

}

TY - JOUR

T1 - A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI

AU - Han, Fang

AU - Liu, Xuzhi

AU - Wang, Chao

AU - Li, Xiao

AU - Qi, Quanwen

AU - Li, Xiaoran

AU - Liu, Zicheng

PY - 2022/10

Y1 - 2022/10

N2 - This paper presents a multi-band low-noise amplifier (LNA) in the 45-nm CMOS silicon-on-insulator (SOI) process. The LNA consists of three stages, with the differential cascode amplifier as the core structure. The first stage is mainly responsible for input matching to ensure favourable noise characteristics and bandwidth, while the subsequent stages increase the gain. Moreover, the LNA utilizes baluns for input/output and interstage impedance matching. Switch capacitances are added to switch the three operating bands of the LNA, which cover 17–38 GHz overall. Measurement results show that the proposed LNA achieves a gain (S21) of 23.0 dB and a noise figure (NF) of 4.0 dB.

AB - This paper presents a multi-band low-noise amplifier (LNA) in the 45-nm CMOS silicon-on-insulator (SOI) process. The LNA consists of three stages, with the differential cascode amplifier as the core structure. The first stage is mainly responsible for input matching to ensure favourable noise characteristics and bandwidth, while the subsequent stages increase the gain. Moreover, the LNA utilizes baluns for input/output and interstage impedance matching. Switch capacitances are added to switch the three operating bands of the LNA, which cover 17–38 GHz overall. Measurement results show that the proposed LNA achieves a gain (S21) of 23.0 dB and a noise figure (NF) of 4.0 dB.

KW - balun

KW - cascode

KW - low-noise amplifier (LNA)

KW - multi-band

KW - switch capacitance

UR - http://www.scopus.com/inward/record.url?scp=85139971062&partnerID=8YFLogxK

U2 - 10.3390/electronics11193255

DO - 10.3390/electronics11193255

M3 - Article

AN - SCOPUS:85139971062

SN - 2079-9292

VL - 11

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 19

M1 - 3255

ER -

A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI

摘要

访问文件

其它文件与链接

指纹

引用此