A Ku-band low noise amplifier based on LTCC technology

A Ku-band low noise amplifier based on LTCC (Low Temperature Co-Fired Ceramic) technology is developed in this paper. To integrate MMIC chips into LTCC substrates, a passive structure of the LNA including bonding wires, via holes array and multilayer ground planes is designed and optimized using 3D full-wave electromagnetic software, the bonding wires are used for interconnection from MMIC chips to microstrip lines and the via holes array are used for grounding between different ground planes. An equivalent π-type model for two-parallel bonding wires is analyzed and parameters of the model are extracted; the pitch of via holes array is studied to obtain good grounding performance. To implement an overall simulation of the LNA, EM (electromagnetic)-based data of the full passive structure are exported into ADS and co-simulation has been done with S parameter data of MMIC chips to achieve the final simulation. The measured results show the LNA has a 40 dB gain with a ±1.215 dB flatness and a 2.9 dB noise figure from 12 GHz to 17 GHz.