@inproceedings{0ee067d8718c443ca989a9f9bc24b73b,
title = "A cantilever-structured AlkGaN/GaN HEMT for building a strain-controlled platform",
abstract = "We demonstrate the AlGaN/GaN high electron mobility transistor (HEMT) featured with a cantilever structure. The output performances of the HEMT before and after the cantilever fabrication process are investigated. By interacting with the cantilever, the output characteristics can be directly modulated by external strain. Additionally, the output current density shows an approximately linear relation with applied strain. The cantilever-structured AlGaN/GaN HEMT is very suitable to build a strain-controlled platform for artificial intelligence systems.",
keywords = "GaN, HEMT, cantilever structure",
author = "Xiao Cui and Qilin Hua and Keyu Ji and Bingjun Wang and Shuo Zhang and Weiguo Hu",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 ; Conference date: 08-04-2021 Through 11-04-2021",
year = "2021",
month = apr,
day = "8",
doi = "10.1109/EDTM50988.2021.9421045",
language = "English",
series = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
address = "United States",
}