跳到主要导航
跳到搜索
跳到主要内容
北京理工大学 首页
English
中文
首页
师资队伍
研究单位
科研成果
奖项
按专业知识、名称或附属进行搜索
查看 Scopus 资料
黄 元
前沿交叉科学研究院
h-index
6573
引用
34
H-指数
根据储存在 Pure 的刊物以及来自 Scopus 的引用文献数量计算
2011
2024
每年的科研成果
概览
指纹图谱
合作网络
科研成果
(135)
相似学者
(42)
指纹图谱
深入其中 Yuan Huang 为活跃的研究主题。这些主题标签来自此人的成果。它们共同形成唯一的指纹。
分类
加权
按字母排序
Material Science
Angle-Resolved Photoemission Spectroscopy
13%
Anisotropy
8%
Atomic Force Microscopy
8%
Boron
16%
Boron Nitride
13%
Charge Carrier
8%
Chemical Vapor Deposition
11%
Crystal Structure
8%
Density
58%
Dielectric Material
13%
Electronic Property
8%
Electronic Structure
32%
Field Effect Transistor
27%
Film
22%
Graphene
61%
Graphene Oxide
12%
Heterojunction
35%
Iron-Based Superconductors
10%
Layered Material
10%
Magnetic Property
9%
Magnetism
14%
Metal Dichalcogenides
13%
Monolayers
100%
Nanocrystalline Material
41%
Nanoparticle
8%
Nanoribbon
8%
Nanowire
12%
Optical Property
10%
Optoelectronics
22%
Oxidation Reaction
8%
Oxide Film
10%
Photoluminescence
19%
Photosensor
13%
Physical Property
18%
Quantum Dot
16%
Raman Spectroscopy
13%
Scanning Tunneling Microscopy
13%
Semiconductor Material
8%
Semimetals
8%
Silicon
13%
Single Crystal
17%
Sodium
8%
Superconducting Material
33%
Superconductivity
26%
Superlattice
40%
Thermal Conductivity
10%
Tin
16%
Transistor
8%
Transition Metal Dichalcogenide
33%
Two-Dimensional Material
65%
Physics
Broken Symmetry
10%
Crystal Structure
5%
Electric Fields
6%
Electronic Structure
23%
Energy Gaps (Solid State)
5%
Energy Transfer
5%
Exchange Bias
12%
Exciton
13%
Fermi Surface
5%
Graphene
17%
Ground State
9%
Harmonics
8%
High Resolution
5%
Layered Material
6%
Magnetic Field
16%
Optoelectronics
7%
Phase Diagrams
5%
Photoelectric Emission
10%
Photonics
5%
Physics
17%
Plasmon
6%
Quantum Phenomena
6%
Scanning Tunneling Microscopy
9%
Second Harmonic Generation
6%
Spintronics
12%
Stacking
12%
Superconductivity
20%
Superlattice
18%
Topological Insulator
24%
Transients
5%
Transition Metal Dichalcogenide
12%
Two-Dimensional Materials
6%
Engineering
Charge Density
12%
Couplings
7%
Crystal Structure
5%
Defects
5%
Engineering
8%
Field-Effect Transistor
12%
Graphene
20%
Great Importance
5%
Heterostructures
8%
Interlayer
6%
Magnetic Field
5%
Magnetoelectronics
9%
Monolayer
13%
MoS2
6%
One Dimensional
6%
Photocurrent
5%
Quantum Dot
8%
Superlattice
6%
Transition Metal Dichalcogenide
5%
Two Dimensional
11%
Two-Dimensional Materials
6%
