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徐 晓龙
集成电路与电子学院
h-index
1479
引用
21
H-指数
根据储存在 Pure 的刊物以及来自 Scopus 的引用文献数量计算
2016
2024
每年的科研成果
概览
指纹图谱
合作网络
科研成果
(41)
相似学者
(5)
指纹图谱
深入其中 Xiaolong Xu 为活跃的研究主题。这些主题标签来自此人的成果。它们共同形成唯一的指纹。
分类
加权
按字母排序
Material Science
Al2O3
20%
Anisotropy
91%
Atomic Structure
15%
Boron Nitride
34%
Carrier Transport
15%
Cesium
20%
Chemical Vapor Deposition
25%
Complementary Metal-Oxide-Semiconductor Device
20%
Contact Resistance
28%
Crystalline Material
53%
Density
31%
Dielectric Material
20%
Electrical Conductivity
17%
Electronic Circuit
37%
Electronic Structure
15%
Epitaxy
25%
Ferroelectricity
15%
Field Effect Transistor
35%
Film
49%
Graphene
48%
Heteroepitaxy
15%
Heterojunction
76%
Hydrogen Evolution
15%
Indium
15%
Ionic Liquid
15%
Light-Emitting Diode
15%
Magnetic Property
38%
Magnetism
45%
Materials Property
19%
Molecular Beam Epitaxy
15%
Molybdenum
26%
Monolayers
22%
Nanosheet
30%
Nanowire
30%
Perovskite Nanocrystal
15%
Perovskite Solar Cell
15%
Physical Property
30%
Raman Spectroscopy
26%
Refractive Index
30%
Secondary Ion Mass Spectrometry
15%
Semimetals
35%
Silicon
29%
Single Crystal
39%
Superlattice
20%
Thin Films
53%
Tin
15%
Transistor
49%
Transition Metal Dichalcogenide
67%
Two-Dimensional Material
100%
Ultrathin Films
15%
Physics
Anisotropy
22%
Black Phosphorus
7%
Coercivity
7%
Distribution Function
5%
Domain Wall
15%
Electron Gas
7%
Electron Microscopy
10%
Epitaxy
10%
Exchange Bias
17%
Exciton
5%
First Principle
6%
Graphene
7%
Ground State
17%
Heterojunctions
15%
Hexagonal Boron Nitride
19%
Hydrogen Evolution Reaction
15%
Indium Selenides
15%
Interface Property
7%
Lattice Mismatch
5%
Magnetic Anisotropy
7%
Magnetic Field
35%
Magnetic Properties
17%
Metalloid
15%
Molecular Beam Epitaxy
15%
Nanoscale
15%
Optoelectronic Device
8%
Optoelectronics
7%
Phase Diagrams
15%
Photoelectric Emission
22%
Photoelectron
5%
Physics
22%
Quantum Hall Effect
15%
Quantum Phenomena
29%
Quantum Simulation
5%
Quantum Transport
7%
Raman Spectroscopy
7%
Room Temperature
30%
Single Crystal
15%
Spectrometer
5%
Spintronics
12%
Stacking
15%
Superconductivity
8%
Superlattice
20%
Thin Films
24%
Topological Insulator
15%
Transition Metal Dichalcogenide
30%
Two-Dimensional Materials
17%
Engineering
Absorption Material
5%
Anisotropic
10%
Chemical Vapor Deposition
22%
Crystal Structure
7%
Crystallographic Orientation
10%
Degree of Freedom
5%
Domain Structure
15%
Energy Engineering
6%
Engineering
35%
Fiber Core
7%
Flexible Substrate
15%
Frequency Vibration
5%
Graphene
20%
Great Importance
15%
Heterojunctions
15%
Heterostructures
8%
Hydrogen Evolution Reaction
9%
Induced Defect
15%
Interlayer
15%
Laser Irradiation
15%
Laser Power
10%
Lasing Mode
7%
Light Source
7%
Local Laser
5%
Magnetic Field
15%
Magnetic State
7%
Magnetoelectronics
15%
Main Driving Force
5%
Molybdenum Disulfide
15%
Nanoelectronics
5%
Nanoscale
15%
Nanowires
15%
Nitride
15%
Optoelectronics
8%
Photodetector
15%
Photonics
17%
Physical Phenomena
7%
Plane Anisotropy
15%
Polydimethylsiloxane
7%
Realization
10%
Refractive Index
15%
Response Time
9%
Responsivity
9%
Room Temperature
30%
Shallow Junction
5%
Simulation Result
15%
Transition Metal Dichalcogenide
24%
Two Dimensional
27%
Two-Dimensional Materials
6%
Vapor Deposition
22%
