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X-band power heterojunction bipolar transistor
Feng Qian
*
, Xiaojian Chen
*
Corresponding author for this work
Nanjing Electronic Devices Institute
Research output
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Contribution to journal
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Article
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peer-review
2
Citations (Scopus)
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Engineering
Heterojunctions
100%
X-Band
100%
Bipolar Transistor
100%
Design Process
50%
Output Power
50%
Measured Result
50%
Maximum Power Density
50%
Design Result
50%
Process Result
50%