Ultrasonic Treatment-Induced Enhancement of Mechanical and Electrical Properties in InGaZnO Thin-Film Transistors

Bin Liu, Xuyang Li, Dan Kuang, Xianwen Liu, Shuo Zhang, Zongchi Bao, Guangcai Yuan, Jian Guo, Ce Ning, Dawei Shi, Feng Wang*, Zhinong Yu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The increasing interest in display electronics necessitates the reduction of mechanical stress while ensuring high performance. In this study, we propose a straightforward approach, namely ultrasonic treatment for reducing stress and enhancing the performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). IGZOTFTs fabricated under 180 min ultrasonic treatment conditions demonstrate exceptional switching characteristics, showing a saturation mobility (μsat) of 22.04 cm2·V1·s1, and a threshold voltage (Vth) of 0.21 V. Moreover, the average Young's modulus on the surface of IGZO thin films decreases to 3.04 GPa. When subjected to bending simulation with a curvature radius of 0.5 mm, TFT devices exhibit approximately 10 MPa reduction in stress at the interface between the active layer and insulating layer. We propose that ultrasonic treatment promotes the formation of metal-oxygen bonds in a-IGZO films through atomic relaxation, reducing the formation of hydrogen-oxygen bonds and thereby improving electrical and mechanical properties.

Original languageEnglish
JournalIEEE Transactions on Electron Devices
DOIs
Publication statusAccepted/In press - 2024

Keywords

  • Amorphous InGaZnO (a-IGZO)
  • Young's modulus
  • thin-film transistors
  • ultrasonic treatment

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