@inproceedings{c36d7d54821b4602bf28110b8afc64c2,
title = "Ultra-High-Sensitivity photodetector from ultraviolet to visible based on Ga-doped In2O3 nanowire phototransistor with top-gate structure",
abstract = "High-performance Ga-doped In2O3 nanowire phototransistor based on top-gate structure was fabricated with gate dielectric is SiO2. By adjusting gate voltage of the phototransistor, the device can detect extremely weak ultraviolet light, with high responsivity (R) and large light-dark current ratio (I ph}}/I dark}}). For example, its responsivity can reach 580 A W and I ph}}/I dark} is maintained at 105 with 300 nm illumination (0.0",
keywords = "Ga-doped InO, nanowire, phototransistor and ultraviolet photoresponse",
author = "Wenhao Ran and Zhen Lou and Guozhen Shen",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 ; Conference date: 08-04-2021 Through 11-04-2021",
year = "2021",
month = apr,
day = "8",
doi = "10.1109/EDTM50988.2021.9420831",
language = "English",
series = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
address = "United States",
}