Twist angle-dependent conductivities across MoS2/graphene heterojunctions

Mengzhou Liao; Ze Wen Wu; Luojun Du; Tingting Zhang; Zheng Wei; Jianqi Zhu; Hua Yu; Jian Tang; Lin Gu; Yanxia Xing; Rong Yang; Dongxia Shi; Yugui Yao; Guangyu Zhang

doi:10.1038/s41467-018-06555-w

Twist angle-dependent conductivities across MoS₂/graphene heterojunctions

Mengzhou Liao, Ze Wen Wu, Luojun Du, Tingting Zhang, Zheng Wei, Jianqi Zhu, Hua Yu, Jian Tang, Lin Gu, Yanxia Xing, Rong Yang, Dongxia Shi, Yugui Yao, Guangyu Zhang^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

99 Citations (Scopus)

Abstract

Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS₂/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS₂/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS₂ devices as well as other TMDCs devices contacted by graphene.

Original language	English
Article number	4068
Journal	Nature Communications
Volume	9
Issue number	1
DOIs	https://doi.org/10.1038/s41467-018-06555-w
Publication status	Published - 1 Dec 2018

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title = "Twist angle-dependent conductivities across MoS2/graphene heterojunctions",

abstract = "Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS2/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS2/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS2 devices as well as other TMDCs devices contacted by graphene.",

author = "Mengzhou Liao and Wu, {Ze Wen} and Luojun Du and Tingting Zhang and Zheng Wei and Jianqi Zhu and Hua Yu and Jian Tang and Lin Gu and Yanxia Xing and Rong Yang and Dongxia Shi and Yugui Yao and Guangyu Zhang",

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doi = "10.1038/s41467-018-06555-w",

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T1 - Twist angle-dependent conductivities across MoS2/graphene heterojunctions

AU - Liao, Mengzhou

AU - Wu, Ze Wen

AU - Du, Luojun

AU - Zhang, Tingting

AU - Wei, Zheng

AU - Zhu, Jianqi

AU - Yu, Hua

AU - Tang, Jian

AU - Gu, Lin

AU - Xing, Yanxia

AU - Yang, Rong

AU - Shi, Dongxia

AU - Yao, Yugui

AU - Zhang, Guangyu

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS2/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS2/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS2 devices as well as other TMDCs devices contacted by graphene.

AB - Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS2/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS2/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS2 devices as well as other TMDCs devices contacted by graphene.

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JO - Nature Communications

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Twist angle-dependent conductivities across MoS₂/graphene heterojunctions

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