Tunable Surface Plasmon Polaritons with Monolithic Schottky Diodes

Yifei Zhang, Haotian Ling, Pingjian Chen, Pengfei Qian, Yanpeng Shi, Yiming Wang, Huayu Feng, Qian Xin, Qingpu Wang*, Shouyuan Shi, Xiaomin Pan, Xinqing Sheng, Aimin Song*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Surface plasmon polaritons (SPPs) provide subwavelength electric field confinement ranging from microwave to the visible. Several approaches have been explored to manipulate SPPs with a typical modulation capability of only a few percent. Here, active control of SPPs using monolithically fabricated Schottky diodes has been first designed and realized, achieving a continuous and significant modulation of transmission, reflection, and absorption. The SPPs propagating on a metal line are attenuated by using split ring resonators (SRRs) with an In-Ga-Zn-O Schottky diode bridging each SRR split gap. The resistance of the diodes can be tuned over a range of a few orders of magnitude with bias voltage, which continuously transforms each SRR to a metallic quasi-loop with subdued resonance. A remarkable modulation of 40% and 19% was demonstrated for the transmission and absorption, respectively, which to the best of our knowledge has not been achieved before.

Original languageEnglish
Pages (from-to)2124-2129
Number of pages6
JournalACS Applied Electronic Materials
Volume1
Issue number10
DOIs
Publication statusPublished - 22 Oct 2019

Keywords

  • In-Ga-Zn-O
  • Schottky diode
  • active modulation
  • split-ring resonator
  • surface plasmon polariton

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