TY - GEN
T1 - The introduction to ICCD or ICMOS performance evaluation method
AU - Li, Shi Long
AU - Shi, Feng
AU - Wang, Xia
N1 - Publisher Copyright:
© 2021 SPIE
PY - 2021
Y1 - 2021
N2 - Based on a large number of research results on ICCD/ICMOS, this paper summarizes and summarizes the performance evaluation of ICCD/ICMOS and the main features of the product. Firstly, based on the definition of ICCD/ICMOS, the development and application background of this kind of digital LLL detector are described. Then, relevant research results are summarized from 12 aspects, including system resolution, signal-to-noise ratio, static imaging quality, system modulation transfer function, photoelectric response uniformity, quality factor, Moire fringe, photo-energy coupling efficiency, seismic characteristic, photoelectron gain, dynamic range and spectral response. This can not only serve as the basis for the inspection and evaluation of this kind of products, but also help us to have a deeper understanding of this device, which has certain guiding significance for promoting its development and progress.
AB - Based on a large number of research results on ICCD/ICMOS, this paper summarizes and summarizes the performance evaluation of ICCD/ICMOS and the main features of the product. Firstly, based on the definition of ICCD/ICMOS, the development and application background of this kind of digital LLL detector are described. Then, relevant research results are summarized from 12 aspects, including system resolution, signal-to-noise ratio, static imaging quality, system modulation transfer function, photoelectric response uniformity, quality factor, Moire fringe, photo-energy coupling efficiency, seismic characteristic, photoelectron gain, dynamic range and spectral response. This can not only serve as the basis for the inspection and evaluation of this kind of products, but also help us to have a deeper understanding of this device, which has certain guiding significance for promoting its development and progress.
KW - Intensified charge-coupled device
KW - Intensified complement metal oxide semiconductor
KW - Performance evaluation
KW - Resolution
KW - Signal to noise ratio
UR - http://www.scopus.com/inward/record.url?scp=85103346094&partnerID=8YFLogxK
U2 - 10.1117/12.2587460
DO - 10.1117/12.2587460
M3 - Conference contribution
AN - SCOPUS:85103346094
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Seventh Symposium on Novel Photoelectronic Detection Technology and Applications
A2 - Su, Junhong
A2 - Chu, Junhao
A2 - Yu, Qifeng
A2 - Jiang, Huilin
PB - SPIE
T2 - 7th Symposium on Novel Photoelectronic Detection Technology and Applications
Y2 - 5 November 2020 through 7 November 2020
ER -
