The annealing process of R.F. magnetron sputtered ZnO:Al films

Zhinong Yu; Jin Xu; Wei Xue; Jinwei Li

doi:10.1109/AOE.2007.4410872

The annealing process of R.F. magnetron sputtered ZnO:Al films

Zhinong Yu^*, Jin Xu, Wei Xue, Jinwei Li

^*Corresponding author for this work

School of Optics and Photonics

Beijing Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The ZnO:Al films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10^-3 Ω·cm was obtained in the condition of vacuum annealing at 220 °C.

Original language	English
Title of host publication	2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE
Pages	552-554
Number of pages	3
DOIs	https://doi.org/10.1109/AOE.2007.4410872
Publication status	Published - 2007
Event	2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE - Shanghai, China Duration: 17 Oct 2007 → 19 Oct 2007

Publication series

Name	2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE

Conference

Conference	2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE
Country/Territory	China
City	Shanghai
Period	17/10/07 → 19/10/07

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10.1109/AOE.2007.4410872

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Yu, Z., Xu, J., Xue, W., & Li, J. (2007). The annealing process of R.F. magnetron sputtered ZnO:Al films. In 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE (pp. 552-554). Article 4410872 (2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE). https://doi.org/10.1109/AOE.2007.4410872

@inproceedings{992288579d2a4b29af542b8863b5ca9f,

title = "The annealing process of R.F. magnetron sputtered ZnO:Al films",

abstract = "The ZnO:Al films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Ω·cm was obtained in the condition of vacuum annealing at 220 °C.",

author = "Zhinong Yu and Jin Xu and Wei Xue and Jinwei Li",

year = "2007",

doi = "10.1109/AOE.2007.4410872",

language = "English",

isbn = "0978921739",

series = "2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE",

pages = "552--554",

booktitle = "2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE",

note = "2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE ; Conference date: 17-10-2007 Through 19-10-2007",

}

Yu, Z, Xu, J, Xue, W & Li, J 2007, The annealing process of R.F. magnetron sputtered ZnO:Al films. in 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE., 4410872, 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE, pp. 552-554, 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE, Shanghai, China, 17/10/07. https://doi.org/10.1109/AOE.2007.4410872

The annealing process of R.F. magnetron sputtered ZnO:Al films. / Yu, Zhinong; Xu, Jin; Xue, Wei et al.
2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE. 2007. p. 552-554 4410872 (2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The annealing process of R.F. magnetron sputtered ZnO:Al films

AU - Yu, Zhinong

AU - Xu, Jin

AU - Xue, Wei

AU - Li, Jinwei

PY - 2007

Y1 - 2007

N2 - The ZnO:Al films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Ω·cm was obtained in the condition of vacuum annealing at 220 °C.

AB - The ZnO:Al films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Ω·cm was obtained in the condition of vacuum annealing at 220 °C.

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U2 - 10.1109/AOE.2007.4410872

DO - 10.1109/AOE.2007.4410872

M3 - Conference contribution

AN - SCOPUS:50049111279

SN - 0978921739

SN - 9780978921736

T3 - 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE

SP - 552

EP - 554

BT - 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE

T2 - 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE

Y2 - 17 October 2007 through 19 October 2007

ER -

The annealing process of R.F. magnetron sputtered ZnO:Al films

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