Synthesis, characterization, photoluminescence and field emission properties of novel durian-like gallium nitride microstructures

Ghulam Nabi; Chuanbao Cao; Waheed S. Khan; Sajad Hussain; Zahid Usman; Tariq Mahmood; Noor Abass Din Khattak; Suling Zhao; Xu Xin; Dapeng Yu; Xuewen Fu

doi:10.1016/j.matchemphys.2012.01.095

Synthesis, characterization, photoluminescence and field emission properties of novel durian-like gallium nitride microstructures

Ghulam Nabi, Chuanbao Cao^*, Waheed S. Khan, Sajad Hussain, Zahid Usman, Tariq Mahmood, Noor Abass Din Khattak, Suling Zhao, Xu Xin, Dapeng Yu, Xuewen Fu

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Durian-like gallium nitride (GaN) microstructures were successfully synthesized on Si substrate by pre-treating Ga metal with aqueous NH ₃ via catalyst assisted chemical vapor deposition (CVD) method at 1200°C. The as-synthesized product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). XRD and EDX analysis revealed that durian-like GaN is pure and single phase. SEM results showed that the size of the durian-like GaN structures was 20-25 μm. GaN microstructures exhibited reasonable field emission properties with the turn-on field of 8.24 V μm ^-1 (0.01 mA cm ^-2) and threshold field of 10.18 V μm ^-1 (1 mA cm ^-2) which is sufficient for applications of electron emission devices, field emission displays and vacuum micro-electronic devices. Photoluminescence (PL) properties of durian-like GaN studied at room temperature showed a strong near-band-edge emission at 369.4 nm (3.36 eV) whereas at low temperature it showed near-band-edge emission at 364.2 nm (3.4 eV) without yellow band emissions. The photoluminescence properties showed that it has also potential application in light-emitting devices.

Original language	English
Pages (from-to)	793-798
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	133
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2012.01.095
Publication status	Published - 16 Apr 2012

Keywords

CVD method
Field emission
Optical properties
Semiconductor

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10.1016/j.matchemphys.2012.01.095

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title = "Synthesis, characterization, photoluminescence and field emission properties of novel durian-like gallium nitride microstructures",

abstract = "Durian-like gallium nitride (GaN) microstructures were successfully synthesized on Si substrate by pre-treating Ga metal with aqueous NH 3 via catalyst assisted chemical vapor deposition (CVD) method at 1200°C. The as-synthesized product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). XRD and EDX analysis revealed that durian-like GaN is pure and single phase. SEM results showed that the size of the durian-like GaN structures was 20-25 μm. GaN microstructures exhibited reasonable field emission properties with the turn-on field of 8.24 V μm -1 (0.01 mA cm -2) and threshold field of 10.18 V μm -1 (1 mA cm -2) which is sufficient for applications of electron emission devices, field emission displays and vacuum micro-electronic devices. Photoluminescence (PL) properties of durian-like GaN studied at room temperature showed a strong near-band-edge emission at 369.4 nm (3.36 eV) whereas at low temperature it showed near-band-edge emission at 364.2 nm (3.4 eV) without yellow band emissions. The photoluminescence properties showed that it has also potential application in light-emitting devices.",

keywords = "CVD method, Field emission, Optical properties, Semiconductor",

author = "Ghulam Nabi and Chuanbao Cao and Khan, {Waheed S.} and Sajad Hussain and Zahid Usman and Tariq Mahmood and Khattak, {Noor Abass Din} and Suling Zhao and Xu Xin and Dapeng Yu and Xuewen Fu",

year = "2012",

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doi = "10.1016/j.matchemphys.2012.01.095",

language = "English",

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TY - JOUR

T1 - Synthesis, characterization, photoluminescence and field emission properties of novel durian-like gallium nitride microstructures

AU - Nabi, Ghulam

AU - Cao, Chuanbao

AU - Khan, Waheed S.

AU - Hussain, Sajad

AU - Usman, Zahid

AU - Mahmood, Tariq

AU - Khattak, Noor Abass Din

AU - Zhao, Suling

AU - Xin, Xu

AU - Yu, Dapeng

AU - Fu, Xuewen

PY - 2012/4/16

Y1 - 2012/4/16

N2 - Durian-like gallium nitride (GaN) microstructures were successfully synthesized on Si substrate by pre-treating Ga metal with aqueous NH 3 via catalyst assisted chemical vapor deposition (CVD) method at 1200°C. The as-synthesized product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). XRD and EDX analysis revealed that durian-like GaN is pure and single phase. SEM results showed that the size of the durian-like GaN structures was 20-25 μm. GaN microstructures exhibited reasonable field emission properties with the turn-on field of 8.24 V μm -1 (0.01 mA cm -2) and threshold field of 10.18 V μm -1 (1 mA cm -2) which is sufficient for applications of electron emission devices, field emission displays and vacuum micro-electronic devices. Photoluminescence (PL) properties of durian-like GaN studied at room temperature showed a strong near-band-edge emission at 369.4 nm (3.36 eV) whereas at low temperature it showed near-band-edge emission at 364.2 nm (3.4 eV) without yellow band emissions. The photoluminescence properties showed that it has also potential application in light-emitting devices.

AB - Durian-like gallium nitride (GaN) microstructures were successfully synthesized on Si substrate by pre-treating Ga metal with aqueous NH 3 via catalyst assisted chemical vapor deposition (CVD) method at 1200°C. The as-synthesized product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). XRD and EDX analysis revealed that durian-like GaN is pure and single phase. SEM results showed that the size of the durian-like GaN structures was 20-25 μm. GaN microstructures exhibited reasonable field emission properties with the turn-on field of 8.24 V μm -1 (0.01 mA cm -2) and threshold field of 10.18 V μm -1 (1 mA cm -2) which is sufficient for applications of electron emission devices, field emission displays and vacuum micro-electronic devices. Photoluminescence (PL) properties of durian-like GaN studied at room temperature showed a strong near-band-edge emission at 369.4 nm (3.36 eV) whereas at low temperature it showed near-band-edge emission at 364.2 nm (3.4 eV) without yellow band emissions. The photoluminescence properties showed that it has also potential application in light-emitting devices.

KW - CVD method

KW - Field emission

KW - Optical properties

KW - Semiconductor

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DO - 10.1016/j.matchemphys.2012.01.095

M3 - Article

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VL - 133

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EP - 798

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -

Synthesis, characterization, photoluminescence and field emission properties of novel durian-like gallium nitride microstructures

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