Abstract
Ultrafast measurement system for transient electrical signals using a scanning tunneling microscope has been developed. The key of the system is a probe integrated with a low-temperature grown GaAs photoconductive switch that is used as a sampler of transient signals generated by ultrashort laser pulses with another photoconductive switch. The tunneling tip is attached to a coplanar strip transmission line with an integrated photoconductive switch. The probe fabrication process and tip characteristics have been reported here. A topographic STM image scanned with such a probe on a gold sample on Si substrate is given. A transient signal with 1.2 ps pulse width in tunneling mode and 2.0 ps in contact mode were observed with the probe.
| Original language | English |
|---|---|
| Article number | 98 |
| Pages (from-to) | 610-614 |
| Number of pages | 5 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5633 |
| DOIs | |
| Publication status | Published - 2005 |
| Event | Advanced Materials and Devices for Sensing and Imaging II - Beijing, China Duration: 8 Nov 2004 → 10 Nov 2004 |
Keywords
- Probe tip
- Transient measurement
- Ultrafast photoconductive switch
- Ultrafast scanning tunneling microscope
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Lan, T., & Ni, G. (2005). Study of tips in an ultrafast scanning tunneling microscope. Proceedings of SPIE - The International Society for Optical Engineering, 5633, 610-614. Article 98. https://doi.org/10.1117/12.581062