Strain tuning of topological band order in cubic semiconductors

Wanxiang Feng*, Wenguang Zhu, Hanno H. Weitering, G. Malcolm Stocks, Yugui Yao, Di Xiao

*Corresponding author for this work

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Abstract

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding principle is established that lattice expansion can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion, and further breaking of the cubic symmetry leads to a topological insulating phase. Using density functional theory calculations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2%-3% biaxial lattice expansion.

Original languageEnglish
Article number195114
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number19
DOIs
Publication statusPublished - 9 May 2012

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Feng, W., Zhu, W., Weitering, H. H., Stocks, G. M., Yao, Y., & Xiao, D. (2012). Strain tuning of topological band order in cubic semiconductors. Physical Review B - Condensed Matter and Materials Physics, 85(19), Article 195114. https://doi.org/10.1103/PhysRevB.85.195114