Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

Yande Que; Wende Xiao; Hui Chen; Dongfei Wang; Shixuan Du; Hong Jun Gao

doi:10.1063/1.4938466

Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

Yande Que, Wende Xiao^*, Hui Chen, Dongfei Wang, Shixuan Du, Hong Jun Gao

^*Corresponding author for this work

University of Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.

Original language	English
Article number	263101
Journal	Applied Physics Letters
Volume	107
Issue number	26
DOIs	https://doi.org/10.1063/1.4938466
Publication status	Published - 28 Dec 2015
Externally published	Yes

Access to Document

10.1063/1.4938466

Cite this

@article{f61d7fdc644b49ccaeea7755da541a36,

title = "Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)",

abstract = "The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.",

author = "Yande Que and Wende Xiao and Hui Chen and Dongfei Wang and Shixuan Du and Gao, \{Hong Jun\}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = dec,

day = "28",

doi = "10.1063/1.4938466",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

AU - Que, Yande

AU - Xiao, Wende

AU - Chen, Hui

AU - Wang, Dongfei

AU - Du, Shixuan

AU - Gao, Hong Jun

PY - 2015/12/28

Y1 - 2015/12/28

N2 - The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.

AB - The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.

UR - http://www.scopus.com/inward/record.url?scp=84953242794&partnerID=8YFLogxK

U2 - 10.1063/1.4938466

DO - 10.1063/1.4938466

M3 - Article

AN - SCOPUS:84953242794

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263101

ER -

Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

Abstract

Access to Document

Other files and links

Fingerprint

Cite this