Small-scale CMOS pseudo SRAM module design

Yun Li*, Zhen Yu Liu, Yue Qiu Han

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

An approach to design small scale CMOS static random access memory (SRAM) is proposed. The design of address decoder, memory cell, and the layout are included. This approach adopts flip-flop array structure. The flip-flops are used as the storage cells and they are stacked to form the whole SRAM module. The word select bit is generated from the address decoder. And one word at a time is selected for reading or writing. The design of the memory core's layout is also discussed since it should be optimized to save area and also should be convenient for realization. It's a full-custom layout. The address decoder is composed of combinational logic circuit and its layout is also designed as a full-custom layout. With all these modules, the integral structure of the SRAM is carried out.

Original languageEnglish
Pages (from-to)127-130
Number of pages4
JournalJournal of Beijing Institute of Technology (English Edition)
Volume13
Issue number2
Publication statusPublished - Jun 2004

Keywords

  • Address decoder
  • Layout
  • Memory core
  • Module design
  • Static random access memory (SRAM)

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