Abstract
An approach to design small scale CMOS static random access memory (SRAM) is proposed. The design of address decoder, memory cell, and the layout are included. This approach adopts flip-flop array structure. The flip-flops are used as the storage cells and they are stacked to form the whole SRAM module. The word select bit is generated from the address decoder. And one word at a time is selected for reading or writing. The design of the memory core's layout is also discussed since it should be optimized to save area and also should be convenient for realization. It's a full-custom layout. The address decoder is composed of combinational logic circuit and its layout is also designed as a full-custom layout. With all these modules, the integral structure of the SRAM is carried out.
Original language | English |
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Pages (from-to) | 127-130 |
Number of pages | 4 |
Journal | Journal of Beijing Institute of Technology (English Edition) |
Volume | 13 |
Issue number | 2 |
Publication status | Published - Jun 2004 |
Keywords
- Address decoder
- Layout
- Memory core
- Module design
- Static random access memory (SRAM)