@inproceedings{0eb15b8990184c04beb8a17a0a7404f5,
title = "Single transistor oscillator based on a Graphene-Aluminum Nitride nano plate resonator",
abstract = "This paper reports on the first demonstration of a high frequency (245 MHz) single transistor oscillator based on Graphene-Aluminum Nitride (G-AlN) nano-plate resonator (NPR). For the first time, a 2-dimensional (2D) electrically conductive graphene layer was integrated on top of an ultra-thin (500 nm) AlN nano-plate and excited into a high frequency contour-extensional mode of vibration by piezoelectric transduction. The resulting ultra-thin, low mass and high frequency G-AlN nanomechanical resonator showed high values of electromechanical coupling coefficient (kt2≈1.8%) and quality factor (Qm≈1000) which enabled the implementation of a low phase noise (-87 dBc/Hz @ 1kHz offset and -125 dBc/Hz floor) single transistor oscillator. The experimental results also demonstrate the great potential of the proposed technology for the implementation of a new class of ultra-sensitive and low noise G-AlN resonant sensors.",
keywords = "Aluminum Nitride (AlN), Graphene, MEMS, NEMS, Nano Plate Resonator, Oscillators",
author = "Zhenyun Qian and Yu Hui and Matteo Rinaldi and Fangze Liu and Swastik Kar",
year = "2013",
doi = "10.1109/EFTF-IFC.2013.6702274",
language = "English",
isbn = "9781479903429",
series = "2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013",
pages = "559--561",
booktitle = "2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013",
note = "2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013 ; Conference date: 21-07-2013 Through 25-07-2013",
}