Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

Han Huang; Swee Liang Wong; Yuzhan Wang; Jia Tao Sun; Xingyu Gao; Andrew Thye Shen Wee

doi:10.1021/jp507072p

Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

Han Huang^*, Swee Liang Wong, Yuzhan Wang, Jia Tao Sun, Xingyu Gao, Andrew Thye Shen Wee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.

Original language	English
Pages (from-to)	24995-24999
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	118
Issue number	43
DOIs	https://doi.org/10.1021/jp507072p
Publication status	Published - 30 Oct 2014
Externally published	Yes

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@article{4e420cf9fb584c2f890a5507cb5d672f,

title = "Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)",

abstract = "The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.",

author = "Han Huang and Wong, {Swee Liang} and Yuzhan Wang and Sun, {Jia Tao} and Xingyu Gao and Wee, {Andrew Thye Shen}",

note = "Publisher Copyright: {\textcopyright} 2014 American Chemical Society.",

year = "2014",

month = oct,

day = "30",

doi = "10.1021/jp507072p",

language = "English",

volume = "118",

pages = "24995--24999",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "43",

}

TY - JOUR

T1 - Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

AU - Huang, Han

AU - Wong, Swee Liang

AU - Wang, Yuzhan

AU - Sun, Jia Tao

AU - Gao, Xingyu

AU - Wee, Andrew Thye Shen

PY - 2014/10/30

Y1 - 2014/10/30

N2 - The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.

AB - The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.

UR - http://www.scopus.com/inward/record.url?scp=84908575753&partnerID=8YFLogxK

U2 - 10.1021/jp507072p

DO - 10.1021/jp507072p

M3 - Article

AN - SCOPUS:84908575753

SN - 1932-7447

VL - 118

SP - 24995

EP - 24999

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 43

ER -

Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

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