Roomerature, Low-Barrier Boron Doping of Graphene

Lida Pan; Yande Que; Hui Chen; Dongfei Wang; Jun Li; Chengmin Shen; Wende Xiao; Shixuan Du; Hongjun Gao; Sokrates T. Pantelides

doi:10.1021/acs.nanolett.5b01839

Roomerature, Low-Barrier Boron Doping of Graphene

Lida Pan, Yande Que, Hui Chen, Dongfei Wang, Jun Li, Chengmin Shen, Wende Xiao, Shixuan Du^*, Hongjun Gao, Sokrates T. Pantelides

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B₂H₆. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.

Original language	English
Pages (from-to)	6464-6468
Number of pages	5
Journal	Nano Letters
Volume	15
Issue number	10
DOIs	https://doi.org/10.1021/acs.nanolett.5b01839
Publication status	Published - 14 Oct 2015
Externally published	Yes

Keywords

boron-doped graphene
first-principles calculations
scanning tunneling microscopy
scanning tunneling spectroscopy

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10.1021/acs.nanolett.5b01839

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Pan, L., Que, Y., Chen, H., Wang, D., Li, J., Shen, C., Xiao, W., Du, S., Gao, H., & Pantelides, S. T. (2015). Roomerature, Low-Barrier Boron Doping of Graphene. Nano Letters, 15(10), 6464-6468. https://doi.org/10.1021/acs.nanolett.5b01839

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abstract = "Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B2H6. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.",

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AU - Pan, Lida

AU - Que, Yande

AU - Chen, Hui

AU - Wang, Dongfei

AU - Li, Jun

AU - Shen, Chengmin

AU - Xiao, Wende

AU - Du, Shixuan

AU - Gao, Hongjun

AU - Pantelides, Sokrates T.

PY - 2015/10/14

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N2 - Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B2H6. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.

AB - Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B2H6. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.

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KW - scanning tunneling microscopy

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Roomerature, Low-Barrier Boron Doping of Graphene

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Keywords

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