Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

C. Wang; H. J. Qu; W. X. Chen; G. Z. Ran; H. Y. Yu; B. Niu; J. Q. Pan; W. Wang

doi:10.1063/1.4792508

Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

C. Wang^*, H. J. Qu, W. X. Chen, G. Z. Ran, H. Y. Yu, B. Niu, J. Q. Pan, W. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Electrical plasmonic sources with compact sizes are a fundamental component in plasmonics. Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon generation efficiency but drops gradually as current increasing; simultaneously, the peak wavelength red shifts evidently, which are attributed to the recombination zone shift and quantum confinement Stark effect.

Original language	English
Article number	061112
Journal	Applied Physics Letters
Volume	102
Issue number	6
DOIs	https://doi.org/10.1063/1.4792508
Publication status	Published - 11 Feb 2013
Externally published	Yes

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@article{37d8d6e2e70d43e7b8c19e30b11d2e7c,

title = "Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode",

abstract = "Electrical plasmonic sources with compact sizes are a fundamental component in plasmonics. Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon generation efficiency but drops gradually as current increasing; simultaneously, the peak wavelength red shifts evidently, which are attributed to the recombination zone shift and quantum confinement Stark effect.",

author = "C. Wang and Qu, {H. J.} and Chen, {W. X.} and Ran, {G. Z.} and Yu, {H. Y.} and B. Niu and Pan, {J. Q.} and W. Wang",

year = "2013",

month = feb,

day = "11",

doi = "10.1063/1.4792508",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

AU - Wang, C.

AU - Qu, H. J.

AU - Chen, W. X.

AU - Ran, G. Z.

AU - Yu, H. Y.

AU - Niu, B.

AU - Pan, J. Q.

AU - Wang, W.

PY - 2013/2/11

Y1 - 2013/2/11

N2 - Electrical plasmonic sources with compact sizes are a fundamental component in plasmonics. Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon generation efficiency but drops gradually as current increasing; simultaneously, the peak wavelength red shifts evidently, which are attributed to the recombination zone shift and quantum confinement Stark effect.

AB - Electrical plasmonic sources with compact sizes are a fundamental component in plasmonics. Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon generation efficiency but drops gradually as current increasing; simultaneously, the peak wavelength red shifts evidently, which are attributed to the recombination zone shift and quantum confinement Stark effect.

UR - http://www.scopus.com/inward/record.url?scp=84874230649&partnerID=8YFLogxK

U2 - 10.1063/1.4792508

DO - 10.1063/1.4792508

M3 - Article

AN - SCOPUS:84874230649

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061112

ER -

Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

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