Performance analysis of PQDCF-coated silicon image sensor using Monte-Carlo ray-trace simulation

Qinwen Tan; Xian Gang Wu; Mengjiao Zhang; Linghai Meng; Haizheng Zhong; Yi Cai; Lingxue Wang

doi:10.1364/OE.27.009079

Performance analysis of PQDCF-coated silicon image sensor using Monte-Carlo ray-trace simulation

Qinwen Tan, Xian Gang Wu, Mengjiao Zhang, Linghai Meng, Haizheng Zhong, Yi Cai, Lingxue Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Perovskite quantum dots embedded composite film (PQDCF) exhibits strong photoluminescence emissions and is expected to be excellent down-shifting material for enhancing ultraviolet (UV) response of silicon devices. In this work, light conversion process is analyzed by combining the experiments with Monte-Carlo ray-trace simulation. Results show that external quantum efficiency (EQE) in the UV region was mainly determined by absorption loss and match of peak wavelength. Moreover, resolution was correlated with thickness and reabsorption. This conclusion provides a guideline for designing novel materials with enhanced UV sensitivity and an EQE of 28% is predicted. Our experimental results showed that the use of red emissive PQDCF achieved an EQE of 20%.

Original language	English
Pages (from-to)	9079-9087
Number of pages	9
Journal	Optics Express
Volume	27
Issue number	6
DOIs	https://doi.org/10.1364/OE.27.009079
Publication status	Published - 18 Mar 2019

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@article{d7f2fd957c8b4d17af07bab8408b500e,

title = "Performance analysis of PQDCF-coated silicon image sensor using Monte-Carlo ray-trace simulation",

abstract = "Perovskite quantum dots embedded composite film (PQDCF) exhibits strong photoluminescence emissions and is expected to be excellent down-shifting material for enhancing ultraviolet (UV) response of silicon devices. In this work, light conversion process is analyzed by combining the experiments with Monte-Carlo ray-trace simulation. Results show that external quantum efficiency (EQE) in the UV region was mainly determined by absorption loss and match of peak wavelength. Moreover, resolution was correlated with thickness and reabsorption. This conclusion provides a guideline for designing novel materials with enhanced UV sensitivity and an EQE of 28% is predicted. Our experimental results showed that the use of red emissive PQDCF achieved an EQE of 20%.",

author = "Qinwen Tan and Wu, {Xian Gang} and Mengjiao Zhang and Linghai Meng and Haizheng Zhong and Yi Cai and Lingxue Wang",

note = "Publisher Copyright: {\textcopyright} 2019 Optical Society of America.",

year = "2019",

month = mar,

day = "18",

doi = "10.1364/OE.27.009079",

language = "English",

volume = "27",

pages = "9079--9087",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group",

number = "6",

}

TY - JOUR

T1 - Performance analysis of PQDCF-coated silicon image sensor using Monte-Carlo ray-trace simulation

AU - Tan, Qinwen

AU - Wu, Xian Gang

AU - Zhang, Mengjiao

AU - Meng, Linghai

AU - Zhong, Haizheng

AU - Cai, Yi

AU - Wang, Lingxue

PY - 2019/3/18

Y1 - 2019/3/18

N2 - Perovskite quantum dots embedded composite film (PQDCF) exhibits strong photoluminescence emissions and is expected to be excellent down-shifting material for enhancing ultraviolet (UV) response of silicon devices. In this work, light conversion process is analyzed by combining the experiments with Monte-Carlo ray-trace simulation. Results show that external quantum efficiency (EQE) in the UV region was mainly determined by absorption loss and match of peak wavelength. Moreover, resolution was correlated with thickness and reabsorption. This conclusion provides a guideline for designing novel materials with enhanced UV sensitivity and an EQE of 28% is predicted. Our experimental results showed that the use of red emissive PQDCF achieved an EQE of 20%.

AB - Perovskite quantum dots embedded composite film (PQDCF) exhibits strong photoluminescence emissions and is expected to be excellent down-shifting material for enhancing ultraviolet (UV) response of silicon devices. In this work, light conversion process is analyzed by combining the experiments with Monte-Carlo ray-trace simulation. Results show that external quantum efficiency (EQE) in the UV region was mainly determined by absorption loss and match of peak wavelength. Moreover, resolution was correlated with thickness and reabsorption. This conclusion provides a guideline for designing novel materials with enhanced UV sensitivity and an EQE of 28% is predicted. Our experimental results showed that the use of red emissive PQDCF achieved an EQE of 20%.

UR - http://www.scopus.com/inward/record.url?scp=85063492816&partnerID=8YFLogxK

U2 - 10.1364/OE.27.009079

DO - 10.1364/OE.27.009079

M3 - Article

C2 - 31052718

AN - SCOPUS:85063492816

SN - 1094-4087

VL - 27

SP - 9079

EP - 9087

JO - Optics Express

JF - Optics Express

IS - 6

ER -

Performance analysis of PQDCF-coated silicon image sensor using Monte-Carlo ray-trace simulation

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