Pearl-like ZnS-decorated InP nanowire heterostructures and their electric behaviors

Guozhen Shen; Po Chiang Chen; Yoshio Bando; Dmitri Golberg; Chongwu Zhou

doi:10.1021/cm802042k

Pearl-like ZnS-decorated InP nanowire heterostructures and their electric behaviors

Guozhen Shen^*, Po Chiang Chen, Yoshio Bando, Dmitri Golberg, Chongwu Zhou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

One-dimensional semiconductor heterostructures with modulated compositions and interfaces have become of particular interest with respect to potential applications in nanoscale building blocks of future optoelectronic and nanoelectronic devices and systems. In this paper, we reported the synthesis of pearl-like heterostructures, which are composed of ZnS-decorated on InP nanowires via a one-step thermochemical method. Field-effect transistors were fabricated on the basis of a single pearl-like InP/ ZnS heterostructure, which exhibited p-type transistor performance and a decent response to UV light exposure. Electronic transport properties of the devices at different temperatures were finally investigated, revealing a thermal activation behavior.

Original language	English
Pages (from-to)	6779-6783
Number of pages	5
Journal	Chemistry of Materials
Volume	20
Issue number	21
DOIs	https://doi.org/10.1021/cm802042k
Publication status	Published - 11 Nov 2008
Externally published	Yes

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abstract = "One-dimensional semiconductor heterostructures with modulated compositions and interfaces have become of particular interest with respect to potential applications in nanoscale building blocks of future optoelectronic and nanoelectronic devices and systems. In this paper, we reported the synthesis of pearl-like heterostructures, which are composed of ZnS-decorated on InP nanowires via a one-step thermochemical method. Field-effect transistors were fabricated on the basis of a single pearl-like InP/ ZnS heterostructure, which exhibited p-type transistor performance and a decent response to UV light exposure. Electronic transport properties of the devices at different temperatures were finally investigated, revealing a thermal activation behavior.",

author = "Guozhen Shen and Chen, {Po Chiang} and Yoshio Bando and Dmitri Golberg and Chongwu Zhou",

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AU - Shen, Guozhen

AU - Chen, Po Chiang

AU - Bando, Yoshio

AU - Golberg, Dmitri

AU - Zhou, Chongwu

PY - 2008/11/11

Y1 - 2008/11/11

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AB - One-dimensional semiconductor heterostructures with modulated compositions and interfaces have become of particular interest with respect to potential applications in nanoscale building blocks of future optoelectronic and nanoelectronic devices and systems. In this paper, we reported the synthesis of pearl-like heterostructures, which are composed of ZnS-decorated on InP nanowires via a one-step thermochemical method. Field-effect transistors were fabricated on the basis of a single pearl-like InP/ ZnS heterostructure, which exhibited p-type transistor performance and a decent response to UV light exposure. Electronic transport properties of the devices at different temperatures were finally investigated, revealing a thermal activation behavior.

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ER -

Pearl-like ZnS-decorated InP nanowire heterostructures and their electric behaviors

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