Patterned 3D-graphene for self-powered broadband photodetector

The remarkable ultra-wideband energy capabilities of zero-bandgap two-dimensional (2D) graphene have made it an outstanding material for photon absorption and charge carrier generation across a broad spectrum. However, atomically thick 2D-graphene only exhibits a light absorption efficiency of 2.3%, posing a challenge for graphene-based photodetectors to harness photon energy effectively. This study utilized plasma-enhanced chemical vapor deposition technology and a mask to create in situ patterned 3D-graphene/Si-based Schottky heterojunctions. The porous structure and natural nano-resonant cavities of the 3D-graphene enhanced the probability of light absorption, while the curved and sharp edges and corners of the patterned 3D-graphene concentrated the local electromagnetic field and induced localized surface plasmon resonance. Both theoretical and experimental analyses confirmed the improved light absorption mechanisms and charge transfer of photogenerated carriers under the built-in electric field. The photodetector based on the patterned 3D-graphene/Si Schottky structure exhibits excellent broadband response characteristics spanning from 380 to 1550 nm, with responsivity and specific detectivity of 68.47 A/W and 1.43 × 10¹² Jones at a wavelength of 1550 nm. Furthermore, the photodetector demonstrated ultrafast microsecond-level response times (116/120 μs rise/fall times) along with exceptional stability and reliability. The potential applications of as-fabricated photodetector include logic devices such as “AND” and “OR” gates and information encryption. This research holds valuable scientific significance for the design of future optoelectronic devices and provides crucial insights and technical support for developing high-performance Si-based graphene detectors.