Abstract
We investigated heterojunctions of Si with large-area high-quality monolayer and multi-layer graphene, as well as thin transparent graphite. We show that by controlling the transmittance and sheet resistance of large-area graphitic electrodes, it is possible to obtain solar cells with power conversion efficiency (PCE) exceeding 3% without any doping requirements. Our calculations indicate that such junctions can form extremely robust interfaces with near-100% internal quantum efficiency. Under optimized doping conditions, power conversion efficiencies increase almost universally by a factor of 2.5. Optimized conditions for reproducibly obtaining cells with PCE > 5% are presented, with the best PCE obtained ∼7.5% with short-circuit current density exceeding 24 mA/cm2.
Original language | English |
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Pages (from-to) | 329-337 |
Number of pages | 9 |
Journal | Carbon |
Volume | 57 |
DOIs | |
Publication status | Published - Jun 2013 |
Externally published | Yes |