Abstract
Based on the structure of ceramic substrate/internal electrodes/thick dielectric film/light-emitting layer/thin dielectric film/ITO, the fabrication process of ZnS:Mn phosphor layer has been investigated to improve the brightness of inorganic thick dielectric electroluminescent (TDEL) devices. The optimal thickness and fabrication temperature of ZnS:Mn film are 600 nm and 280°C, respectively, and produced the highest brightness of TDEL devices. The photoelectric properties of TDEL devices were improved by an annealing process of ZnS:Mn layer, and the optimal brightness-voltage curve (that is, the biggest brightness and the steepest curve) of TDEL devices was obtained by an annealing temperature of 500°C. The improvement of photoelectric properties of TDEL devices by the optimal fabrication temperature and annealing temperature of ZnS:Mn layer was attributed to the crystalline improvement of ZnS:Mn layer and the uniform diffusion of Mn.
| Original language | English |
|---|---|
| Pages (from-to) | 153-155+165 |
| Journal | Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology |
| Volume | 27 |
| Issue number | 2 |
| Publication status | Published - Feb 2007 |
Keywords
- Inorganic electroluminescent display
- Thick dielectric film
- ZnS:Mn phosphor layer