Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Xue Chen, Bingkun Chen, Bei Jiang, Tengfei Gao, Gang Shang, Su Ting Han, Chi Ching Kuo, Vellaisamy A.L. Roy, Ye Zhou*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

76 Citations (Scopus)

Abstract

Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non-contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)-based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires-based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs-based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs-based optoelectronic synaptic devices.

Original languageEnglish
Article number2208807
JournalAdvanced Functional Materials
Volume33
Issue number1
DOIs
Publication statusPublished - 3 Jan 2023
Externally publishedYes

Keywords

  • nanowires
  • neuromorphic applications
  • optoelectronic synapse
  • synaptic functionalities
  • UV–vis–IR

Fingerprint

Dive into the research topics of 'Nanowires for UV–vis–IR Optoelectronic Synaptic Devices'. Together they form a unique fingerprint.

Cite this