TY - JOUR
T1 - Nanowires for UV–vis–IR Optoelectronic Synaptic Devices
AU - Chen, Xue
AU - Chen, Bingkun
AU - Jiang, Bei
AU - Gao, Tengfei
AU - Shang, Gang
AU - Han, Su Ting
AU - Kuo, Chi Ching
AU - Roy, Vellaisamy A.L.
AU - Zhou, Ye
N1 - Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2023/1/3
Y1 - 2023/1/3
N2 - Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non-contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)-based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires-based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs-based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs-based optoelectronic synaptic devices.
AB - Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non-contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)-based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires-based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs-based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs-based optoelectronic synaptic devices.
KW - nanowires
KW - neuromorphic applications
KW - optoelectronic synapse
KW - synaptic functionalities
KW - UV–vis–IR
UR - http://www.scopus.com/inward/record.url?scp=85141413874&partnerID=8YFLogxK
U2 - 10.1002/adfm.202208807
DO - 10.1002/adfm.202208807
M3 - Review article
AN - SCOPUS:85141413874
SN - 1616-301X
VL - 33
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 1
M1 - 2208807
ER -