TY - GEN
T1 - Investigation of electrostatic gating in two-dimensional transitional metal dichalcogenide (TMDC) field effect transistors (FETs)
AU - Islam, Arnob
AU - Liu, Xia
AU - Odhner, Bradley
AU - Tupta, Mary Anne
AU - Feng, Philip X.L.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2019/1/8
Y1 - 2019/1/8
N2 - In the active and growing explorations of the rapidly emerging two-dimensional (2D) electronic and optoelectronic devices based upon atomically thin semiconductors and their heterostructures, developing better understanding of electrostatic gating is very important, especially for realizing logic and switching devices by employing 2D field effect transistors (FETs) with low subthreshold swing (SS) and high on-off ratio (I On /I Off ). In this study, we propose and demonstrate a method that includes a combination of two-probe and four-probe I-V measurements on 2D transition metal dichalcogenide (TMDC) FETs to uncover the evolution of resistance of channel and contacts separately, upon change of gate voltage during switching between On and Off states. In 2D TMDC FETs with Schottky barrier (SB) contacts, we demonstrate that switching between On and Off states is primarily attained by modulating SBs due to change of electric field via electrostatic gating. Therefore, transistor characteristics is mostly determined by the contact resistance change upon the application of gate voltage. We present our method for 2D TMDC (MoS 2 , MoTe2) FETs. In addition, we also perform C-V measurements to investigate the presence of interface trap states and quantum capacitance in TMDC FETs.
AB - In the active and growing explorations of the rapidly emerging two-dimensional (2D) electronic and optoelectronic devices based upon atomically thin semiconductors and their heterostructures, developing better understanding of electrostatic gating is very important, especially for realizing logic and switching devices by employing 2D field effect transistors (FETs) with low subthreshold swing (SS) and high on-off ratio (I On /I Off ). In this study, we propose and demonstrate a method that includes a combination of two-probe and four-probe I-V measurements on 2D transition metal dichalcogenide (TMDC) FETs to uncover the evolution of resistance of channel and contacts separately, upon change of gate voltage during switching between On and Off states. In 2D TMDC FETs with Schottky barrier (SB) contacts, we demonstrate that switching between On and Off states is primarily attained by modulating SBs due to change of electric field via electrostatic gating. Therefore, transistor characteristics is mostly determined by the contact resistance change upon the application of gate voltage. We present our method for 2D TMDC (MoS 2 , MoTe2) FETs. In addition, we also perform C-V measurements to investigate the presence of interface trap states and quantum capacitance in TMDC FETs.
KW - 2D materials
KW - MoS2
KW - MoTe2
KW - Schottky barrier
KW - atomic layer semiconductors
KW - capacitance
KW - electrostatic gating
KW - field effect transistor (FET)
KW - transition metal dichalcogenide (TMDC)
UR - http://www.scopus.com/inward/record.url?scp=85061781250&partnerID=8YFLogxK
U2 - 10.1109/NMDC.2018.8605859
DO - 10.1109/NMDC.2018.8605859
M3 - Conference contribution
AN - SCOPUS:85061781250
T3 - 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018
BT - 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th IEEE Nanotechnology Materials and Devices Conference, NMDC 2018
Y2 - 14 October 2018 through 17 October 2018
ER -