In Situ Transmission Electron Microscopy Study of Conductive Filament Formation in Copper Oxides

Xinchun Tian; Sanaz Yazdanparast; Geoff Brennecka; Xiaoli Tan

doi:10.1109/TDMR.2020.3015398

In Situ Transmission Electron Microscopy Study of Conductive Filament Formation in Copper Oxides

Xinchun Tian, Sanaz Yazdanparast, Geoff Brennecka, Xiaoli Tan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The structural and electrical property changes of two types of copper oxides (CuO and Cu2O) under voltage bias are studied with in situ transmission electron microscopy (TEM). The phases of different materials are confirmed with electron diffraction. In both types of oxides, dynamic conductive path formation and dissolution are observed. The decrease in resistance of CuO film is found to be accompanied with the formation of Cu4O3 phase where the electric field strength is highest. We also find that the decrease in resistivity of Cu2O film is more extensive and occurs in an area depending on the level of current compliance. The physical mechanisms responsible for the observations and their implications for the formation of conducting regions in copper oxide-based memristors are discussed.

Original language	English
Article number	9163080
Pages (from-to)	609-612
Number of pages	4
Journal	IEEE Transactions on Device and Materials Reliability
Volume	20
Issue number	3
DOIs	https://doi.org/10.1109/TDMR.2020.3015398
Publication status	Published - Sept 2020
Externally published	Yes

Keywords

Copper compounds
memristors
semiconductor device breakdown
transmission electron microscopy

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10.1109/TDMR.2020.3015398

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Tian, X., Yazdanparast, S., Brennecka, G., & Tan, X. (2020). In Situ Transmission Electron Microscopy Study of Conductive Filament Formation in Copper Oxides. IEEE Transactions on Device and Materials Reliability, 20(3), 609-612. Article 9163080. https://doi.org/10.1109/TDMR.2020.3015398

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abstract = "The structural and electrical property changes of two types of copper oxides (CuO and Cu2O) under voltage bias are studied with in situ transmission electron microscopy (TEM). The phases of different materials are confirmed with electron diffraction. In both types of oxides, dynamic conductive path formation and dissolution are observed. The decrease in resistance of CuO film is found to be accompanied with the formation of Cu4O3 phase where the electric field strength is highest. We also find that the decrease in resistivity of Cu2O film is more extensive and occurs in an area depending on the level of current compliance. The physical mechanisms responsible for the observations and their implications for the formation of conducting regions in copper oxide-based memristors are discussed.",

keywords = "Copper compounds, memristors, semiconductor device breakdown, transmission electron microscopy",

author = "Xinchun Tian and Sanaz Yazdanparast and Geoff Brennecka and Xiaoli Tan",

note = "Publisher Copyright: {\textcopyright} 2001-2011 IEEE.",

year = "2020",

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doi = "10.1109/TDMR.2020.3015398",

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AU - Tian, Xinchun

AU - Yazdanparast, Sanaz

AU - Brennecka, Geoff

AU - Tan, Xiaoli

PY - 2020/9

Y1 - 2020/9

N2 - The structural and electrical property changes of two types of copper oxides (CuO and Cu2O) under voltage bias are studied with in situ transmission electron microscopy (TEM). The phases of different materials are confirmed with electron diffraction. In both types of oxides, dynamic conductive path formation and dissolution are observed. The decrease in resistance of CuO film is found to be accompanied with the formation of Cu4O3 phase where the electric field strength is highest. We also find that the decrease in resistivity of Cu2O film is more extensive and occurs in an area depending on the level of current compliance. The physical mechanisms responsible for the observations and their implications for the formation of conducting regions in copper oxide-based memristors are discussed.

AB - The structural and electrical property changes of two types of copper oxides (CuO and Cu2O) under voltage bias are studied with in situ transmission electron microscopy (TEM). The phases of different materials are confirmed with electron diffraction. In both types of oxides, dynamic conductive path formation and dissolution are observed. The decrease in resistance of CuO film is found to be accompanied with the formation of Cu4O3 phase where the electric field strength is highest. We also find that the decrease in resistivity of Cu2O film is more extensive and occurs in an area depending on the level of current compliance. The physical mechanisms responsible for the observations and their implications for the formation of conducting regions in copper oxide-based memristors are discussed.

KW - Copper compounds

KW - memristors

KW - semiconductor device breakdown

KW - transmission electron microscopy

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In Situ Transmission Electron Microscopy Study of Conductive Filament Formation in Copper Oxides

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