Highly Tunable Interlayer Coupling and Electronic Structures of Few-Layer Graphene with Pressure

Lei Mu; Qiaoxia Xing; Yanlin Mou; Junwei Ma; Chong Wang; Jiasheng Zhang; Yixuan Ma; Yuchen Lei; Yuangang Xie; Boyang Yu; Chenghao Pan; Shenyang Huang; Hugen Yan

doi:10.1021/acs.nanolett.4c02035

Highly Tunable Interlayer Coupling and Electronic Structures of Few-Layer Graphene with Pressure

Lei Mu, Qiaoxia Xing, Yanlin Mou, Junwei Ma, Chong Wang, Jiasheng Zhang, Yixuan Ma, Yuchen Lei, Yuangang Xie, Boyang Yu, Chenghao Pan, Shenyang Huang^*, Hugen Yan^*

^*Corresponding author for this work

School of Physics

Fudan University

Research output: Contribution to journal › Article › peer-review

Abstract

The interlayer electronic coupling is responsible for the electronic structure evolution from monolayer graphene to graphite and for the moiré potential in twisted bilayer graphene. Here we demonstrate that the interlayer transfer integral (hopping parameter) increases nearly 40% with a quite moderate pressure of ∼3.5 GPa, manifested by the resonance peak shift in the infrared spectra of all 2-10 L graphene. A simple model based on the Morse potential enabled us to establish the relationship between the transfer integral and pressure. Our work provides fundamental insights into the dependence of the electronic coupling on the interlayer distance.

Original language	English
Journal	Nano Letters
DOIs	https://doi.org/10.1021/acs.nanolett.4c02035
Publication status	Accepted/In press - 2024

Keywords

few-layer graphene
infrared spectroscopy
interlayer coupling
pressure effect

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10.1021/acs.nanolett.4c02035

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title = "Highly Tunable Interlayer Coupling and Electronic Structures of Few-Layer Graphene with Pressure",

abstract = "The interlayer electronic coupling is responsible for the electronic structure evolution from monolayer graphene to graphite and for the moir{\'e} potential in twisted bilayer graphene. Here we demonstrate that the interlayer transfer integral (hopping parameter) increases nearly 40% with a quite moderate pressure of ∼3.5 GPa, manifested by the resonance peak shift in the infrared spectra of all 2-10 L graphene. A simple model based on the Morse potential enabled us to establish the relationship between the transfer integral and pressure. Our work provides fundamental insights into the dependence of the electronic coupling on the interlayer distance.",

keywords = "few-layer graphene, infrared spectroscopy, interlayer coupling, pressure effect",

author = "Lei Mu and Qiaoxia Xing and Yanlin Mou and Junwei Ma and Chong Wang and Jiasheng Zhang and Yixuan Ma and Yuchen Lei and Yuangang Xie and Boyang Yu and Chenghao Pan and Shenyang Huang and Hugen Yan",

note = "Publisher Copyright: {\textcopyright} 2024 American Chemical Society.",

year = "2024",

doi = "10.1021/acs.nanolett.4c02035",

language = "English",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Highly Tunable Interlayer Coupling and Electronic Structures of Few-Layer Graphene with Pressure

AU - Mu, Lei

AU - Xing, Qiaoxia

AU - Mou, Yanlin

AU - Ma, Junwei

AU - Wang, Chong

AU - Zhang, Jiasheng

AU - Ma, Yixuan

AU - Lei, Yuchen

AU - Xie, Yuangang

AU - Yu, Boyang

AU - Pan, Chenghao

AU - Huang, Shenyang

AU - Yan, Hugen

PY - 2024

Y1 - 2024

N2 - The interlayer electronic coupling is responsible for the electronic structure evolution from monolayer graphene to graphite and for the moiré potential in twisted bilayer graphene. Here we demonstrate that the interlayer transfer integral (hopping parameter) increases nearly 40% with a quite moderate pressure of ∼3.5 GPa, manifested by the resonance peak shift in the infrared spectra of all 2-10 L graphene. A simple model based on the Morse potential enabled us to establish the relationship between the transfer integral and pressure. Our work provides fundamental insights into the dependence of the electronic coupling on the interlayer distance.

AB - The interlayer electronic coupling is responsible for the electronic structure evolution from monolayer graphene to graphite and for the moiré potential in twisted bilayer graphene. Here we demonstrate that the interlayer transfer integral (hopping parameter) increases nearly 40% with a quite moderate pressure of ∼3.5 GPa, manifested by the resonance peak shift in the infrared spectra of all 2-10 L graphene. A simple model based on the Morse potential enabled us to establish the relationship between the transfer integral and pressure. Our work provides fundamental insights into the dependence of the electronic coupling on the interlayer distance.

KW - few-layer graphene

KW - infrared spectroscopy

KW - interlayer coupling

KW - pressure effect

UR - http://www.scopus.com/inward/record.url?scp=85203846999&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.4c02035

DO - 10.1021/acs.nanolett.4c02035

M3 - Article

AN - SCOPUS:85203846999

SN - 1530-6984

JO - Nano Letters

JF - Nano Letters

ER -

Highly Tunable Interlayer Coupling and Electronic Structures of Few-Layer Graphene with Pressure

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Keywords

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