High-temperature dielectric response and multiscale mechanism of SiO 2/Si3N4 nanocomposites

Zhi Ling Hou; Liang Zhang; Jie Yuan; Wei Li Song; Mao Sheng Cao

doi:10.1088/0256-307X/25/6/090

High-temperature dielectric response and multiscale mechanism of SiO ₂/Si₃N₄ nanocomposites

Zhi Ling Hou, Liang Zhang, Jie Yuan, Wei Li Song, Mao Sheng Cao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The high-temperature dielectric properties of SiO₂/Si ₃N₄ nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0 GHz are measured by the resonant cavity method. The SiO₂/Si₃N₄ nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO₂/Si₃N₄ on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.

Original language	English
Pages (from-to)	2249-2252
Number of pages	4
Journal	Chinese Physics Letters
Volume	25
Issue number	6
DOIs	https://doi.org/10.1088/0256-307X/25/6/090
Publication status	Published - 1 Jun 2008

Access to Document

10.1088/0256-307X/25/6/090

Cite this

@article{613ff6d1f2294a65873aa955b5eaeaa8,

title = "High-temperature dielectric response and multiscale mechanism of SiO 2/Si3N4 nanocomposites",

abstract = "The high-temperature dielectric properties of SiO2/Si 3N4 nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0 GHz are measured by the resonant cavity method. The SiO2/Si3N4 nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO2/Si3N4 on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.",

author = "Hou, {Zhi Ling} and Liang Zhang and Jie Yuan and Song, {Wei Li} and Cao, {Mao Sheng}",

year = "2008",

month = jun,

day = "1",

doi = "10.1088/0256-307X/25/6/090",

language = "English",

volume = "25",

pages = "2249--2252",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - High-temperature dielectric response and multiscale mechanism of SiO 2/Si3N4 nanocomposites

AU - Hou, Zhi Ling

AU - Zhang, Liang

AU - Yuan, Jie

AU - Song, Wei Li

AU - Cao, Mao Sheng

PY - 2008/6/1

Y1 - 2008/6/1

N2 - The high-temperature dielectric properties of SiO2/Si 3N4 nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0 GHz are measured by the resonant cavity method. The SiO2/Si3N4 nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO2/Si3N4 on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.

AB - The high-temperature dielectric properties of SiO2/Si 3N4 nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0 GHz are measured by the resonant cavity method. The SiO2/Si3N4 nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO2/Si3N4 on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.

UR - http://www.scopus.com/inward/record.url?scp=46749092964&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/25/6/090

DO - 10.1088/0256-307X/25/6/090

M3 - Article

AN - SCOPUS:46749092964

SN - 0256-307X

VL - 25

SP - 2249

EP - 2252

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 6

ER -

High-temperature dielectric response and multiscale mechanism of SiO ₂/Si₃N₄ nanocomposites

Abstract

Access to Document

Other files and links

Fingerprint

Cite this