TY - JOUR
T1 - High performance rigid and flexible visible-light photodetectors based on aligned X(In, Ga)P nanowire arrays
AU - Chen, Gui
AU - Liang, Bo
AU - Liu, Zhe
AU - Yu, Gang
AU - Xie, Xuming
AU - Luo, Tao
AU - Xie, Zhong
AU - Chen, Di
AU - Zhu, Ming Qiang
AU - Shen, Guozhen
PY - 2014/2/21
Y1 - 2014/2/21
N2 - InP and GaP nanowires (NWs) were synthesized via a simple thermal evaporation method for applications as high performance visible-light photodetectors. Individual InP NW field-effect transistors (FETs) were fabricated to study their electronic transport and photoresponse characteristics, which exhibited typical n-type transistor characteristics with an efficient electron mobility of 1.21 cm2 V-1 s -1, a fast response time (∼0.1 s) and good sensitivity with a spectral responsivity of 779.14 A W-1 and a high quantum efficiency of 1.53 × 105% to visible light irradiation. Using the contact printing process, large scale aligned InP NW arrays were assembled on both rigid SiO2/Si and flexible PET substrates. Both rigid and flexible InP NW array based photodetectors demonstrated excellent photoresponse performance, especially a faster response, for example, from 0.1 s to 80 ms. In addition, the flexible InP NW array based photodetectors exhibited good flexibility, good folding endurance and electrical stability. Using similar processes, aligned GaP NW array based photodetectors were also fabricated on SiO2/Si and PET substrates, which also exhibited fast, reversible, and stable photoresponse properties. These merits demonstrate that the as-prepared InP and GaP NWs are good candidates with substantial potential for future electronic and optoelectronic nanodevice applications.
AB - InP and GaP nanowires (NWs) were synthesized via a simple thermal evaporation method for applications as high performance visible-light photodetectors. Individual InP NW field-effect transistors (FETs) were fabricated to study their electronic transport and photoresponse characteristics, which exhibited typical n-type transistor characteristics with an efficient electron mobility of 1.21 cm2 V-1 s -1, a fast response time (∼0.1 s) and good sensitivity with a spectral responsivity of 779.14 A W-1 and a high quantum efficiency of 1.53 × 105% to visible light irradiation. Using the contact printing process, large scale aligned InP NW arrays were assembled on both rigid SiO2/Si and flexible PET substrates. Both rigid and flexible InP NW array based photodetectors demonstrated excellent photoresponse performance, especially a faster response, for example, from 0.1 s to 80 ms. In addition, the flexible InP NW array based photodetectors exhibited good flexibility, good folding endurance and electrical stability. Using similar processes, aligned GaP NW array based photodetectors were also fabricated on SiO2/Si and PET substrates, which also exhibited fast, reversible, and stable photoresponse properties. These merits demonstrate that the as-prepared InP and GaP NWs are good candidates with substantial potential for future electronic and optoelectronic nanodevice applications.
UR - http://www.scopus.com/inward/record.url?scp=84893034012&partnerID=8YFLogxK
U2 - 10.1039/c3tc31507j
DO - 10.1039/c3tc31507j
M3 - Article
AN - SCOPUS:84893034012
SN - 2050-7526
VL - 2
SP - 1270
EP - 1277
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 7
ER -