High performance GaN based switching and linear power amplifier for airborne application

Hamid Raza Dhanyal; Weidong Hu; Ali Ahmed; Hamza Nawaz; Waseem Shahzad

doi:10.1109/PIERS-Fall48861.2019.9021854

High performance GaN based switching and linear power amplifier for airborne application

Hamid Raza Dhanyal, Weidong Hu, Ali Ahmed, Hamza Nawaz, Waseem Shahzad

School of Integrated Circuits and Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Considering the requirements of amplifiers for modern communication systems and having different topology variants with different advantages or disadvantages over each other, this paper presents experimental comparison between Class AB and High efficiency Class F^-1 power amplifiers using GaN based Transistors. The results show that Class F^-1 power amplifier exhibit higher output power and higher efficiency but degraded linearity response as compared to class AB power amplifier. For comparison, the inverse class F and class AB power amplifiers were designed and implemented at 2.14 GHz using GaN Hemt. Measured performance showed 7% higher power added efficiency along with 0.3 dB increase in output power for inverse class F power amplifier.

Original language	English
Title of host publication	2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3278-3282
Number of pages	5
ISBN (Electronic)	9781728153049
DOIs	https://doi.org/10.1109/PIERS-Fall48861.2019.9021854
Publication status	Published - Dec 2019
Event	2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Xiamen, China Duration: 17 Dec 2019 → 20 Dec 2019

Publication series

Name	2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings

Conference

Conference	2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019
Country/Territory	China
City	Xiamen
Period	17/12/19 → 20/12/19

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10.1109/PIERS-Fall48861.2019.9021854

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Dhanyal, H. R., Hu, W., Ahmed, A., Nawaz, H., & Shahzad, W. (2019). High performance GaN based switching and linear power amplifier for airborne application. In 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings (pp. 3278-3282). Article 9021854 (2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PIERS-Fall48861.2019.9021854

Dhanyal, Hamid Raza ; Hu, Weidong ; Ahmed, Ali et al. / High performance GaN based switching and linear power amplifier for airborne application. 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 3278-3282 (2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings).

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title = "High performance GaN based switching and linear power amplifier for airborne application",

abstract = "Considering the requirements of amplifiers for modern communication systems and having different topology variants with different advantages or disadvantages over each other, this paper presents experimental comparison between Class AB and High efficiency Class F-1 power amplifiers using GaN based Transistors. The results show that Class F-1 power amplifier exhibit higher output power and higher efficiency but degraded linearity response as compared to class AB power amplifier. For comparison, the inverse class F and class AB power amplifiers were designed and implemented at 2.14 GHz using GaN Hemt. Measured performance showed 7% higher power added efficiency along with 0.3 dB increase in output power for inverse class F power amplifier.",

author = "Dhanyal, {Hamid Raza} and Weidong Hu and Ali Ahmed and Hamza Nawaz and Waseem Shahzad",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 ; Conference date: 17-12-2019 Through 20-12-2019",

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language = "English",

series = "2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings",

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}

Dhanyal, HR, Hu, W, Ahmed, A, Nawaz, H & Shahzad, W 2019, High performance GaN based switching and linear power amplifier for airborne application. in 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings., 9021854, 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 3278-3282, 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019, Xiamen, China, 17/12/19. https://doi.org/10.1109/PIERS-Fall48861.2019.9021854

High performance GaN based switching and linear power amplifier for airborne application. / Dhanyal, Hamid Raza; Hu, Weidong; Ahmed, Ali et al.
2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 3278-3282 9021854 (2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High performance GaN based switching and linear power amplifier for airborne application

AU - Dhanyal, Hamid Raza

AU - Hu, Weidong

AU - Ahmed, Ali

AU - Nawaz, Hamza

AU - Shahzad, Waseem

PY - 2019/12

Y1 - 2019/12

N2 - Considering the requirements of amplifiers for modern communication systems and having different topology variants with different advantages or disadvantages over each other, this paper presents experimental comparison between Class AB and High efficiency Class F-1 power amplifiers using GaN based Transistors. The results show that Class F-1 power amplifier exhibit higher output power and higher efficiency but degraded linearity response as compared to class AB power amplifier. For comparison, the inverse class F and class AB power amplifiers were designed and implemented at 2.14 GHz using GaN Hemt. Measured performance showed 7% higher power added efficiency along with 0.3 dB increase in output power for inverse class F power amplifier.

AB - Considering the requirements of amplifiers for modern communication systems and having different topology variants with different advantages or disadvantages over each other, this paper presents experimental comparison between Class AB and High efficiency Class F-1 power amplifiers using GaN based Transistors. The results show that Class F-1 power amplifier exhibit higher output power and higher efficiency but degraded linearity response as compared to class AB power amplifier. For comparison, the inverse class F and class AB power amplifiers were designed and implemented at 2.14 GHz using GaN Hemt. Measured performance showed 7% higher power added efficiency along with 0.3 dB increase in output power for inverse class F power amplifier.

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DO - 10.1109/PIERS-Fall48861.2019.9021854

M3 - Conference contribution

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T3 - 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings

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BT - 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019

Y2 - 17 December 2019 through 20 December 2019

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Dhanyal HR, Hu W, Ahmed A, Nawaz H, Shahzad W. High performance GaN based switching and linear power amplifier for airborne application. In 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. p. 3278-3282. 9021854. (2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings). doi: 10.1109/PIERS-Fall48861.2019.9021854

High performance GaN based switching and linear power amplifier for airborne application

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