High-mobility solution-processed amorphous indium zinc oxide/In 2O3 nanocrystal hybrid thin-film transistor

Chun Lan Wang; Xing Qiang Liu; Xiang Heng Xiao; Yue Li Liu; Wen Chen; Jin Chai Li; Guo Zhen Shen; Lei Liao

doi:10.1109/LED.2012.2226425

High-mobility solution-processed amorphous indium zinc oxide/In ₂O₃ nanocrystal hybrid thin-film transistor

Chun Lan Wang^*, Xing Qiang Liu, Xiang Heng Xiao, Yue Li Liu, Wen Chen, Jin Chai Li, Guo Zhen Shen, Lei Liao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In ₂O₃ NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm²V^-1s^-1 and an on-off ratio of 10⁷ , which were obtained at 1 mol% In₂O ₃ NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.

Original language	English
Article number	6374643
Pages (from-to)	72-74
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1109/LED.2012.2226425
Publication status	Published - 2013
Externally published	Yes

Keywords

Indium zinc oxide (IZO)
low temperature
solution processing
thin-film transistors (TFTs)

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10.1109/LED.2012.2226425

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title = "High-mobility solution-processed amorphous indium zinc oxide/In 2O3 nanocrystal hybrid thin-film transistor",

abstract = "High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In 2O3 NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm2V-1s-1 and an on-off ratio of 107 , which were obtained at 1 mol% In2O 3 NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.",

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author = "Wang, {Chun Lan} and Liu, {Xing Qiang} and Xiao, {Xiang Heng} and Liu, {Yue Li} and Wen Chen and Li, {Jin Chai} and Shen, {Guo Zhen} and Lei Liao",

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AU - Wang, Chun Lan

AU - Liu, Xing Qiang

AU - Xiao, Xiang Heng

AU - Liu, Yue Li

AU - Chen, Wen

AU - Li, Jin Chai

AU - Shen, Guo Zhen

AU - Liao, Lei

PY - 2013

Y1 - 2013

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AB - High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In 2O3 NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm2V-1s-1 and an on-off ratio of 107 , which were obtained at 1 mol% In2O 3 NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.

KW - Indium zinc oxide (IZO)

KW - low temperature

KW - solution processing

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High-mobility solution-processed amorphous indium zinc oxide/In ₂O₃ nanocrystal hybrid thin-film transistor

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Keywords

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