Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

Wen Liu; Laifei Cheng; Xiaoqiang Li; Yiguang Wang

doi:10.1039/c5nr06659j

Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

Wen Liu, Laifei Cheng, Xiaoqiang Li, Yiguang Wang^*

^*Corresponding author for this work

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.

Original language	English
Pages (from-to)	762-765
Number of pages	4
Journal	Nanoscale
Volume	8
Issue number	2
DOIs	https://doi.org/10.1039/c5nr06659j
Publication status	Published - 14 Jan 2016
Externally published	Yes

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title = "Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy",

abstract = "The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.",

author = "Wen Liu and Laifei Cheng and Xiaoqiang Li and Yiguang Wang",

note = "Publisher Copyright: {\textcopyright} 2016 The Royal Society of Chemistry.",

year = "2016",

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T1 - Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

AU - Liu, Wen

AU - Cheng, Laifei

AU - Li, Xiaoqiang

AU - Wang, Yiguang

PY - 2016/1/14

Y1 - 2016/1/14

N2 - The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.

AB - The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.

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U2 - 10.1039/c5nr06659j

DO - 10.1039/c5nr06659j

M3 - Article

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VL - 8

SP - 762

EP - 765

JO - Nanoscale

JF - Nanoscale

IS - 2

ER -

Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

Abstract

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