Abstract
This paper presents theoretical analysis for determination of semiconductor properties through Hall-Effect measurement with contactless microwave techniques. The scattering characteristics of semiconductor with tensor conductivity resulting of the Hall-Effect is analyzed with 3-D edge-element to determine the properties of semiconductor. Some useful curves are given and the procedure of determining the mobility and the carrier concentration of II-VI semiconductor with these curves is described.
| Original language | English |
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| Pages | 105-108 |
| Number of pages | 4 |
| Publication status | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 International Topical Meeting on Microwave Photonics, MWP'96 - Kyoto, Jpn Duration: 3 Dec 1996 → 5 Dec 1996 |
Conference
| Conference | Proceedings of the 1996 International Topical Meeting on Microwave Photonics, MWP'96 |
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| City | Kyoto, Jpn |
| Period | 3/12/96 → 5/12/96 |