Curvature conservation and conduction modulation for symmetric charged ferroelectric domain walls

Yuanyuan Fan, Deshan Liang, Huayu Yang, Chen Liang, Shouzhe Dong, Rongzhen Gao, Minchuan Liang, Jia Yang, Yue Wang, Hui Ai, Ji Ma, Jing Ma, Jinxing Zhang, Long Qing Chen, Jing Wang*, Ce Wen Nan, Houbing Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Curvature conservation is a common feature for the physical properties with topological constraints, from the macroscopic cosmic string loops to the microscopic quantized vortex rings in the superfluid. Interestingly, ferroelectric domain-wall curvature is important to determine its conduction, which is the key parameter for designing domain-wall nanoelectronic devices. Here, we demonstrate the curvature conservation of the charged domain walls confined in ferroelectric topological structures with specific domain symmetry by combining piezoelectric force microscopy, conducting atomic force microscopy, and phase-field simulations. Significantly, the intrinsic conductivity of the charged domain walls exhibits an inverse functional relationship with the local domain-wall curvature in the ferroelectric BiFeO3 nano-islands, which can also be precisely and continuously modulated by applying an electric field. This work provides us with an insightful understanding of the conduction mechanism of charged domain walls confined in ferroelectric topological structures with a high degree of spatial symmetry, which paves the way for the application of charged domain walls as flexible conducting channels with continuously changing resistance states to be used for ferroelectric domain-wall memristors.

Original languageEnglish
Article number119861
JournalActa Materialia
Volume270
DOIs
Publication statusPublished - 15 May 2024

Keywords

  • Conduction modulation
  • Curvature conservation
  • Domain walls
  • Ferroelectric nanoisland

Fingerprint

Dive into the research topics of 'Curvature conservation and conduction modulation for symmetric charged ferroelectric domain walls'. Together they form a unique fingerprint.

Cite this