Controlling the Interface Areas of Organic/Inorganic Semiconductor Heterojunction Nanowires for High-Performance Diodes

Zheng Xue; Hui Yang; Juan Gao; Jiaofu Li; Yanhuan Chen; Zhiyu Jia; Yongjun Li; Huibiao Liu; Wensheng Yang; Yuliang Li; Dan Li

doi:10.1021/acsami.6b06274

Controlling the Interface Areas of Organic/Inorganic Semiconductor Heterojunction Nanowires for High-Performance Diodes

Zheng Xue, Hui Yang, Juan Gao, Jiaofu Li, Yanhuan Chen, Zhiyu Jia, Yongjun Li, Huibiao Liu^*, Wensheng Yang, Yuliang Li, Dan Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

A new method of in situ electrically induced self-assembly technology combined with electrochemical deposition has been developed for the controllable preparation of organic/inorganic core/shell semiconductor heterojunction nanowire arrays. The size of the interface of the heterojunction nanowire can be tuned by the growing parameter. The heterojunction nanowires of graphdiyne/CuS with core/shell structure showed the strong dependence of rectification ratio and perfect diode performance on the size of the interface. It will be a new way for controlling the structures and properties of one-dimensional heterojunction nanomaterials.

Original language	English
Pages (from-to)	21563-21569
Number of pages	7
Journal	ACS applied materials & interfaces
Volume	8
Issue number	33
DOIs	https://doi.org/10.1021/acsami.6b06274
Publication status	Published - 24 Aug 2016
Externally published	Yes

Keywords

CuS
core/shell
graphdiyne
heterojunction nanowires
organic/inorganic
rectification ratio

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10.1021/acsami.6b06274

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title = "Controlling the Interface Areas of Organic/Inorganic Semiconductor Heterojunction Nanowires for High-Performance Diodes",

abstract = "A new method of in situ electrically induced self-assembly technology combined with electrochemical deposition has been developed for the controllable preparation of organic/inorganic core/shell semiconductor heterojunction nanowire arrays. The size of the interface of the heterojunction nanowire can be tuned by the growing parameter. The heterojunction nanowires of graphdiyne/CuS with core/shell structure showed the strong dependence of rectification ratio and perfect diode performance on the size of the interface. It will be a new way for controlling the structures and properties of one-dimensional heterojunction nanomaterials.",

keywords = "CuS, core/shell, graphdiyne, heterojunction nanowires, organic/inorganic, rectification ratio",

author = "Zheng Xue and Hui Yang and Juan Gao and Jiaofu Li and Yanhuan Chen and Zhiyu Jia and Yongjun Li and Huibiao Liu and Wensheng Yang and Yuliang Li and Dan Li",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

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doi = "10.1021/acsami.6b06274",

language = "English",

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T1 - Controlling the Interface Areas of Organic/Inorganic Semiconductor Heterojunction Nanowires for High-Performance Diodes

AU - Xue, Zheng

AU - Yang, Hui

AU - Gao, Juan

AU - Li, Jiaofu

AU - Chen, Yanhuan

AU - Jia, Zhiyu

AU - Li, Yongjun

AU - Liu, Huibiao

AU - Yang, Wensheng

AU - Li, Yuliang

AU - Li, Dan

PY - 2016/8/24

Y1 - 2016/8/24

N2 - A new method of in situ electrically induced self-assembly technology combined with electrochemical deposition has been developed for the controllable preparation of organic/inorganic core/shell semiconductor heterojunction nanowire arrays. The size of the interface of the heterojunction nanowire can be tuned by the growing parameter. The heterojunction nanowires of graphdiyne/CuS with core/shell structure showed the strong dependence of rectification ratio and perfect diode performance on the size of the interface. It will be a new way for controlling the structures and properties of one-dimensional heterojunction nanomaterials.

AB - A new method of in situ electrically induced self-assembly technology combined with electrochemical deposition has been developed for the controllable preparation of organic/inorganic core/shell semiconductor heterojunction nanowire arrays. The size of the interface of the heterojunction nanowire can be tuned by the growing parameter. The heterojunction nanowires of graphdiyne/CuS with core/shell structure showed the strong dependence of rectification ratio and perfect diode performance on the size of the interface. It will be a new way for controlling the structures and properties of one-dimensional heterojunction nanomaterials.

KW - CuS

KW - core/shell

KW - graphdiyne

KW - heterojunction nanowires

KW - organic/inorganic

KW - rectification ratio

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U2 - 10.1021/acsami.6b06274

DO - 10.1021/acsami.6b06274

M3 - Article

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VL - 8

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EP - 21569

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 33

ER -

Controlling the Interface Areas of Organic/Inorganic Semiconductor Heterojunction Nanowires for High-Performance Diodes

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Keywords

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