Complete ZVS Analysis in Dual Active Bridge

Zero-voltage-switching (ZVS) has been widely applied in widebandgap devices based on high-switching-frequency converters, for instance, dual-active-bridge isolated dc-dc converter, which consists of two H-bridges. To secure ZVS for all eight switches, previous literature mostly focuses on half-bridge to analyze switching transitions, which, however, is rather incomplete due to ignoring the impact of modulation strategies and cannot fulfill all circumstances. In this letter, the whole H-bridge is used as a unit to analyze the ZVS transient process, addressing the ZVS setting in different modulation strategies. The minimal initial inductor energy to complete the ZVS process is also quantified, which in return can reduce the transformer current, thereby enhancing the efficiency. Furthermore, the accurate ZVS transition time is derived incorporating with the nonlinearity of switch output capacitance, which can be further used to set the dead-band time. An H-bridge prototype with SiC devices is built up to verify the theory proposed in this letter.