Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

Pengfei Tian; Jonathan J.D. McKendry; Zheng Gong; Shuailong Zhang; Scott Watson; Dandan Zhu; Ian M. Watson; Erdan Gu; Anthony E. Kelly; Colin J. Humphreys; Martin D. Dawson

doi:10.1109/IPCon.2013.6656387

Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

Pengfei Tian, Jonathan J.D. McKendry, Zheng Gong^*, Shuailong Zhang, Scott Watson, Dandan Zhu, Ian M. Watson, Erdan Gu, Anthony E. Kelly, Colin J. Humphreys, Martin D. Dawson

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.

Original language	English
Title of host publication	2013 IEEE Photonics Conference, IPC 2013
Pages	97-98
Number of pages	2
DOIs	https://doi.org/10.1109/IPCon.2013.6656387
Publication status	Published - 2013
Externally published	Yes
Event	2013 26th IEEE Photonics Conference, IPC 2013 - Bellevue, WA, United States Duration: 8 Sept 2013 → 12 Sept 2013

Publication series

Name	2013 IEEE Photonics Conference, IPC 2013

Conference

Conference	2013 26th IEEE Photonics Conference, IPC 2013
Country/Territory	United States
City	Bellevue, WA
Period	8/09/13 → 12/09/13

Keywords

GaN
Si
bandwidth
micro-LEDs

Access to Document

10.1109/IPCon.2013.6656387

Cite this

Tian, P., McKendry, J. J. D., Gong, Z., Zhang, S., Watson, S., Zhu, D., Watson, I. M., Gu, E., Kelly, A. E., Humphreys, C. J., & Dawson, M. D. (2013). Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. In 2013 IEEE Photonics Conference, IPC 2013 (pp. 97-98). Article 6656387 (2013 IEEE Photonics Conference, IPC 2013). https://doi.org/10.1109/IPCon.2013.6656387

@inproceedings{26bd051fa1b74ab88caa7f34b069a147,

title = "Characteristics and applications of InGaN micro-light emitting diodes on Si substrates",

abstract = "InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.",

keywords = "GaN, Si, bandwidth, micro-LEDs",

author = "Pengfei Tian and McKendry, {Jonathan J.D.} and Zheng Gong and Shuailong Zhang and Scott Watson and Dandan Zhu and Watson, {Ian M.} and Erdan Gu and Kelly, {Anthony E.} and Humphreys, {Colin J.} and Dawson, {Martin D.}",

year = "2013",

doi = "10.1109/IPCon.2013.6656387",

language = "English",

isbn = "9781457715075",

series = "2013 IEEE Photonics Conference, IPC 2013",

pages = "97--98",

booktitle = "2013 IEEE Photonics Conference, IPC 2013",

note = "2013 26th IEEE Photonics Conference, IPC 2013 ; Conference date: 08-09-2013 Through 12-09-2013",

}

Tian, P, McKendry, JJD, Gong, Z, Zhang, S, Watson, S, Zhu, D, Watson, IM, Gu, E, Kelly, AE, Humphreys, CJ & Dawson, MD 2013, Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. in 2013 IEEE Photonics Conference, IPC 2013., 6656387, 2013 IEEE Photonics Conference, IPC 2013, pp. 97-98, 2013 26th IEEE Photonics Conference, IPC 2013, Bellevue, WA, United States, 8/09/13. https://doi.org/10.1109/IPCon.2013.6656387

TY - GEN

T1 - Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

AU - Tian, Pengfei

AU - McKendry, Jonathan J.D.

AU - Gong, Zheng

AU - Zhang, Shuailong

AU - Watson, Scott

AU - Zhu, Dandan

AU - Watson, Ian M.

AU - Gu, Erdan

AU - Kelly, Anthony E.

AU - Humphreys, Colin J.

AU - Dawson, Martin D.

PY - 2013

Y1 - 2013

N2 - InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.

AB - InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.

KW - GaN

KW - Si

KW - bandwidth

KW - micro-LEDs

UR - http://www.scopus.com/inward/record.url?scp=84892692834&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2013.6656387

DO - 10.1109/IPCon.2013.6656387

M3 - Conference contribution

AN - SCOPUS:84892692834

SN - 9781457715075

T3 - 2013 IEEE Photonics Conference, IPC 2013

SP - 97

EP - 98

BT - 2013 IEEE Photonics Conference, IPC 2013

T2 - 2013 26th IEEE Photonics Conference, IPC 2013

Y2 - 8 September 2013 through 12 September 2013

ER -

Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

Abstract

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Conference

Keywords

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